- Vgs - Gate-Source Voltage :
- Maximum Operating Temperature :
- Id - Continuous Drain Current :
- Rds On - Drain-Source Resistance :
- Vgs th - Gate-Source Threshold Voltage :
- Qg - Gate Charge :
- Tradename :
16 products
IMAGE | PART NO. | PRICE | QUANTITY | STOCK | MANUFACTURE | DESCRIPTION | Vgs - Gate-Source Voltage | Mounting Style | Package / Case | Minimum Operating Temperature | Maximum Operating Temperature | Packaging | Number of Channels | Technology | Transistor Polarity | Vds - Drain-Source Breakdown Voltage | Id - Continuous Drain Current | Rds On - Drain-Source Resistance | Vgs th - Gate-Source Threshold Voltage | Qg - Gate Charge | Channel Mode | Tradename | |
---|---|---|---|---|---|---|---|---|---|---|---|---|---|---|---|---|---|---|---|---|---|---|---|
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GET PRICE |
43,400
In-stock
|
onsemi | MOSFET 60V P-Channel QFET | 25 V | Through Hole | TO-220-3 | - 55 C | + 175 C | Tube | 1 Channel | Si | P-Channel | - 60 V | - 27 A | 70 mOhms | Enhancement | QFET | |||||
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3,657
In-stock
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Fairchild Semiconductor | MOSFET 60V P-Channel QFET | 25 V | Through Hole | TO-220-3 | - 55 C | + 175 C | Tube | 1 Channel | Si | P-Channel | - 60 V | - 47 A | 26 mOhms | Enhancement | QFET | ||||||
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1,439
In-stock
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Infineon Technologies | MOSFET P-Ch -60V -80A TO220-3 | +/- 20 V | Through Hole | TO-220-3 | - 55 C | + 175 C | Tube | 1 Channel | Si | P-Channel | - 60 V | - 80 A | 21 mOhms | - 4 V | 173 nC | Enhancement | SIPMOS | ||||
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2,691
In-stock
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STMicroelectronics | MOSFET P-Ch 60V 0.15Ohm 10A pwr MOSFET | 20 V | Through Hole | TO-220-3 | + 175 C | Tube | 1 Channel | Si | P-Channel | - 60 V | - 10 A | 180 mOhms | 4 V | 7 nC | |||||||
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717
In-stock
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Fairchild Semiconductor | MOSFET -60V -30A P-Channel | 25 V | Through Hole | TO-220-3 | - 55 C | + 175 C | Tube | 1 Channel | Si | P-Channel | - 60 V | - 30 A | 26 mOhms | Enhancement | |||||||
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846
In-stock
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Infineon Technologies | MOSFET P-Ch -60V -80A TO220-3 | +/- 20 V | Through Hole | TO-220-3 | - 55 C | + 175 C | Tube | 1 Channel | Si | P-Channel | - 60 V | - 80 A | 21 mOhms | - 4 V | 173 nC | Enhancement | |||||
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854
In-stock
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Fairchild Semiconductor | MOSFET 60V P-Channel QFET | 25 V | Through Hole | TO-220-3 | - 55 C | + 175 C | Tube | 1 Channel | Si | P-Channel | - 60 V | - 11.4 A | 175 mOhms | Enhancement | QFET | ||||||
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1,333
In-stock
|
Fairchild Semiconductor | MOSFET 60V P-Channel QFET | 25 V | Through Hole | TO-220-3 | - 55 C | + 175 C | Tube | 1 Channel | Si | P-Channel | - 60 V | - 6.7 A | 410 mOhms | Enhancement | QFET | ||||||
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5,000
In-stock
|
onsemi | MOSFET -60V -12A P-Channel | 20 V | Through Hole | TO-220-3 | - 55 C | + 175 C | Tube | 1 Channel | Si | P-Channel | - 60 V | - 12 A | 156 mOhms | Enhancement | |||||||
|
GET PRICE |
15,240
In-stock
|
onsemi | MOSFET 60V P-Channel QFET | 25 V | Through Hole | TO-220-3 | - 55 C | + 175 C | Tube | 1 Channel | Si | P-Channel | - 60 V | - 17 A | 120 mOhms | Enhancement | QFET | |||||
|
664
In-stock
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Infineon Technologies | MOSFET P-Ch -60V -18.7A TO220-3 | 20 V | Through Hole | TO-220-3 | - 55 C | + 175 C | Tube | 1 Channel | Si | P-Channel | - 60 V | - 18.7 A | 130 mOhms | - 21 nC | SIPMOS | ||||||
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189
In-stock
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onsemi | MOSFET PCH 4V DRIVE SERIES | Through Hole | TO-220-3 | Tube | 1 Channel | Si | P-Channel | - 60 V | - 78 A | 6.5 mOhms | |||||||||||
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1,839
In-stock
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onsemi | MOSFET PCH 4V DRIVE SERIES | 20 V | Through Hole | TO-220-3 | - 55 C | + 150 C | Tube | 1 Channel | Si | P-Channel | - 60 V | - 28 A | 28.5 mOhms | 80 nC | |||||||
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8,920
In-stock
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Infineon Technologies | MOSFET P-Ch -60V -8.8A TO220-3 | +/- 20 V | Through Hole | TO-220-3 | - 55 C | + 175 C | Tube | 1 Channel | Si | P-Channel | - 60 V | - 8.8 A | 230 mOhms | - 4 V | 15 nC | Enhancement | SIPMOS | ||||
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590
In-stock
|
STMicroelectronics | MOSFET P-CH 60V 0.13Ohm 10A STripFET VI | 20 V | Through Hole | TO-220-3 | - 55 C | + 175 C | Tube | 1 Channel | Si | P-Channel | - 60 V | - 10 A | 160 mOhms | 2 V to 4 V | 6.4 nC | ||||||
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369
In-stock
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Infineon Technologies | MOSFET P-Ch -60V -8.8A TO220-3 | +/- 20 V | Through Hole | TO-220-3 | - 55 C | + 175 C | Tube | 1 Channel | Si | P-Channel | - 60 V | - 8.8 A | 230 mOhms | - 4 V | 15 nC | Enhancement |