- Vgs - Gate-Source Voltage :
- Mounting Style :
- Minimum Operating Temperature :
- Maximum Operating Temperature :
- Id - Continuous Drain Current :
-
- - 106 A (1)
- - 11.5 A (2)
- - 12 A (1)
- - 120 A (2)
- - 120 mA (1)
- - 122 mA (1)
- - 137 mA (1)
- - 16 A (2)
- - 2.8 A (1)
- - 200 mA (2)
- - 225 mA (1)
- - 24 A (2)
- - 26 A (4)
- - 3.4 A (1)
- - 3.7 A (2)
- - 30 A (1)
- - 32 A (3)
- - 35 mA (1)
- - 48 A (2)
- - 5.2 A (1)
- - 5.7 A (1)
- - 53 A (1)
- - 670 mA (2)
- - 68 A (2)
- - 7.3 A (2)
- - 90 A (3)
- Vgs th - Gate-Source Threshold Voltage :
- Qg - Gate Charge :
- Tradename :
- Applied Filters :
43 products
| IMAGE | PART NO. | PRICE | QUANTITY | STOCK | MANUFACTURE | DESCRIPTION | Vgs - Gate-Source Voltage | Mounting Style | Package / Case | Minimum Operating Temperature | Maximum Operating Temperature | Packaging | Number of Channels | Technology | Transistor Polarity | Vds - Drain-Source Breakdown Voltage | Id - Continuous Drain Current | Rds On - Drain-Source Resistance | Vgs th - Gate-Source Threshold Voltage | Qg - Gate Charge | Channel Mode | Tradename | |
|---|---|---|---|---|---|---|---|---|---|---|---|---|---|---|---|---|---|---|---|---|---|---|---|
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GET PRICE |
11,766
In-stock
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Vishay Semiconductors | MOSFET -200v -12A 83W AEC-Q101 Qualified | +/- 20 V | SMD/SMT | PowerPAK-SO-8L-4 | - 55 C | + 175 C | Reel | 1 Channel | Si | P-Channel | - 200 V | - 12 A | 0.178 Ohms | - 3.5 V | 106 nC | Enhancement | TrenchFET | ||
|
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GET PRICE |
2,483
In-stock
|
IXYS | MOSFET -48.0 Amps -200V 0.085 Rds | 20 V | Through Hole | TO-247-3 | - 55 C | + 150 C | Tube | 1 Channel | Si | P-Channel | - 200 V | - 48 A | 85 mOhms | - 4 V | 103 nC | Enhancement | PolarP | ||
|
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GET PRICE |
5,574
In-stock
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Fairchild Semiconductor | MOSFET 200V P-Channel QFET | 30 V | SMD/SMT | TO-252-3 | - 55 C | + 150 C | Reel | 1 Channel | Si | P-Channel | - 200 V | - 5.7 A | 690 mOhms | Enhancement | |||||
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GET PRICE |
4,468
In-stock
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Fairchild Semiconductor | MOSFET 200V P-Channel QFET | 30 V | Through Hole | TO-251-3 | - 55 C | + 150 C | Tube | 1 Channel | Si | P-Channel | - 200 V | - 3.7 A | 1.4 Ohms | Enhancement | |||||
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GET PRICE |
6,610
In-stock
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IXYS | MOSFET -26.0 Amps -200V 0.170 Rds | 20 V | Through Hole | TO-220-3 | - 55 C | + 175 C | Tube | 1 Channel | Si | P-Channel | - 200 V | - 26 A | 170 mOhms | Enhancement | |||||
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GET PRICE |
122
In-stock
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IXYS | MOSFET TrenchP Power MOSFETs | 15 V | Through Hole | PLUS-247-3 | - 55 C | + 150 C | Tube | Si | P-Channel | - 200 V | - 120 A | 30 mOhms | - 4.5 V | 740 nC | Enhancement | TrenchP | |||
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GET PRICE |
1,288
In-stock
|
IXYS | MOSFET TenchP Power MOSFET | 15 V | SMD/SMT | TO-263-3 | - 55 C | + 150 C | Tube | 1 Channel | Si | P-Channel | - 200 V | - 32 A | 130 mOhms | - 4 V | 180 nC | Enhancement | |||
|
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GET PRICE |
1,868
In-stock
|
IXYS | MOSFET -26.0 Amps -200V 0.170 Rds | 20 V | Through Hole | TO-247-3 | - 55 C | + 175 C | Tube | 1 Channel | Si | P-Channel | - 200 V | - 26 A | 170 mOhms | Enhancement | |||||
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GET PRICE |
248
In-stock
|
IXYS | MOSFET TrenchP Power MOSFET | 15 V | Through Hole | TO-264-3 | - 55 C | + 150 C | Tube | Si | P-Channel | - 200 V | - 120 A | 30 mOhms | - 4.5 V | 740 nC | Enhancement | TrenchP | |||
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GET PRICE |
499
In-stock
|
IXYS | MOSFET -90.0 Amps -200V 0.044 Rds | 20 V | Through Hole | TO-264-3 | - 55 C | + 150 C | Tube | 1 Channel | Si | P-Channel | - 200 V | - 90 A | 44 mOhms | ||||||
|
|
GET PRICE |
6,201
In-stock
|
Fairchild Semiconductor | MOSFET -200V Single | 30 V | SMD/SMT | SOT-223-4 | - 55 C | + 150 C | Reel | 1 Channel | Si | P-Channel | - 200 V | - 670 mA | 2.7 Ohms | Enhancement | |||||
|
|
GET PRICE |
3,912
In-stock
|
Fairchild Semiconductor | MOSFET 200V P-Channel QFET | 30 V | SMD/SMT | TO-252-3 | - 55 C | + 150 C | Reel | 1 Channel | Si | P-Channel | - 200 V | - 3.7 A | 1.4 Ohms | Enhancement | |||||
|
|
GET PRICE |
1,430
In-stock
|
Fairchild Semiconductor | MOSFET 200V P-Channel QFET | 30 V | SMD/SMT | TO-263-3 | - 55 C | + 150 C | Reel | 1 Channel | Si | P-Channel | - 200 V | - 7.3 A | 690 mOhms | Enhancement | |||||
|
|
GET PRICE |
1,210
In-stock
|
Fairchild Semiconductor | MOSFET 200V P-Channel QFET | 30 V | SMD/SMT | TO-263-3 | - 55 C | + 150 C | Reel | 1 Channel | Si | P-Channel | - 200 V | - 11.5 A | 470 mOhms | Enhancement | |||||
|
|
GET PRICE |
1,762
In-stock
|
Fairchild Semiconductor | MOSFET 200V P-Channel QFET | 30 V | Through Hole | TO-220-3 | - 55 C | + 150 C | Tube | 1 Channel | Si | P-Channel | - 200 V | - 11.5 A | 470 mOhms | Enhancement | QFET | ||||
|
|
GET PRICE |
329
In-stock
|
IXYS | MOSFET -26.0 Amps -200V 0.170 Rds | 20 V | SMD/SMT | TO-263-3 | - 55 C | + 175 C | Tube | 1 Channel | Si | P-Channel | - 200 V | - 26 A | 170 mOhms | Enhancement | |||||
|
|
GET PRICE |
47,330
In-stock
|
Diodes Incorporated | MOSFET 200V P-CHANNEL | 20 V | SMD/SMT | SOT-23F-3 | - 55 C | + 150 C | Reel | 1 Channel | Si | P-Channel | - 200 V | - 137 mA | 28 Ohms | Enhancement | |||||
|
|
GET PRICE |
3,227
In-stock
|
Nexperia | MOSFET TAPE-7 MOSFET | 20 V | SMD/SMT | SOT-223-3 | - 65 C | + 150 C | Reel | 1 Channel | Si | P-Channel | - 200 V | - 225 mA | 12 Ohms | Enhancement | |||||
|
|
GET PRICE |
480
In-stock
|
IXYS | MOSFET -26.0 Amps -200V 0.170 Rds | 20 V | Through Hole | TO-3P-3 | - 55 C | + 175 C | Tube | 1 Channel | Si | P-Channel | - 200 V | - 26 A | 170 mOhms | Enhancement | |||||
|
|
GET PRICE |
39
In-stock
|
IXYS | MOSFET TrenchP Power MOSFET | Chassis Mount | SOT-227-4 | Tube | Si | P-Channel | - 200 V | - 106 A | 30 mOhms | ||||||||||
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GET PRICE |
1,008
In-stock
|
Fairchild Semiconductor | MOSFET 200V P-Channel QFET | 30 V | Through Hole | TO-220-3 | - 55 C | + 150 C | Tube | 1 Channel | Si | P-Channel | - 200 V | - 2.8 A | 2.7 Ohms | Enhancement | QFET | ||||
|
|
GET PRICE |
1,181
In-stock
|
Fairchild Semiconductor | MOSFET 200V P-Channel QFET | 30 V | Through Hole | TO-220FP-3 | - 55 C | + 150 C | Tube | 1 Channel | Si | P-Channel | - 200 V | - 3.4 A | 1.4 Ohms | Enhancement | QFET | ||||
|
|
GET PRICE |
271
In-stock
|
Fairchild Semiconductor | MOSFET 200V P-Channel QFET | 30 V | Through Hole | TO-220FP-3 | - 55 C | + 150 C | Tube | 1 Channel | Si | P-Channel | - 200 V | - 5.2 A | 690 mOhms | Enhancement | QFET | ||||
|
|
GET PRICE |
4,129
In-stock
|
Diodes Incorporated | MOSFET P-Chnl 200V | 20 V | SMD/SMT | SOT-23-3 | - 55 C | + 150 C | Reel | 1 Channel | Si | P-Channel | - 200 V | - 35 mA | 80 Ohms | Enhancement | |||||
|
|
GET PRICE |
56
In-stock
|
IXYS | MOSFET TrenchP Power MOSFET | Through Hole | TO-268-3 | Tube | 1 Channel | Si | P-Channel | - 200 V | - 68 A | 55 mOhms | |||||||||
|
|
GET PRICE |
86
In-stock
|
IXYS | MOSFET -24 Amps -200V 0.15 Rds | 20 V | Through Hole | TO-247-3 | - 55 C | + 150 C | Tube | 1 Channel | Si | P-Channel | - 200 V | - 24 A | 150 mOhms | - 5 V | 150 nC | Enhancement | |||
|
|
GET PRICE |
611
In-stock
|
Diodes Incorporated | MOSFET P-Chnl 200V | 20 V | SMD/SMT | SOT-223-3 | - 55 C | + 150 C | Reel | 1 Channel | Si | P-Channel | - 200 V | - 200 mA | 25 Ohms | Enhancement | |||||
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|
GET PRICE |
40
In-stock
|
IXYS | MOSFET -48.0 Amps -200V 0.085 Rds | 20 V | SMD/SMT | TO-268-3 | - 55 C | + 150 C | Tube | 1 Channel | Si | P-Channel | - 200 V | - 48 A | 85 mOhms | Enhancement | |||||
|
|
GET PRICE |
59
In-stock
|
IXYS | MOSFET -90.0 Amps -200V 0.044 Rds | 20 V | Through Hole | PLUS-247-3 | - 55 C | + 150 C | Tube | 1 Channel | Si | P-Channel | - 200 V | - 90 A | 44 mOhms | - 4 V | 205 nC | Enhancement | PolarP | ||
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VIEW | IXYS | MOSFET TrenchP Power MOSFET | Through Hole | TO-247-3 | Tube | Si | P-Channel | - 200 V | - 68 A | 55 mOhms |
