- Manufacture :
- Vgs - Gate-Source Voltage :
- Package / Case :
- Id - Continuous Drain Current :
- Rds On - Drain-Source Resistance :
- Qg - Gate Charge :
5 products
| IMAGE | PART NO. | PRICE | QUANTITY | STOCK | MANUFACTURE | DESCRIPTION | Vgs - Gate-Source Voltage | Mounting Style | Package / Case | Minimum Operating Temperature | Maximum Operating Temperature | Packaging | Number of Channels | Technology | Transistor Polarity | Vds - Drain-Source Breakdown Voltage | Id - Continuous Drain Current | Rds On - Drain-Source Resistance | Vgs th - Gate-Source Threshold Voltage | Qg - Gate Charge | Channel Mode | |
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4,916
In-stock
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Nexperia | MOSFET 20V P-channel Trench MOSFET | +/- 12 V | SMD/SMT | SOT-23-3 | - 55 C | + 150 C | Reel | 1 Channel | Si | P-Channel | - 20 V | - 3.3 A | 67 mOhms | - 1.25 V | 9 nC | Enhancement | |||
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5,327
In-stock
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Nexperia | MOSFET 20V P-channel Trench MOSFET | +/- 12 V | SMD/SMT | SOT-23-3 | - 55 C | + 150 C | Reel | 1 Channel | Si | P-Channel | - 20 V | - 3.3 A | 67 mOhms | - 1.25 V | 9 nC | Enhancement | |||
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6,920
In-stock
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Nexperia | MOSFET PMV30XPEA/TO-236AB/REEL 7" Q3/ | +/- 12 V | SMD/SMT | SOT-23-3 | - 55 C | + 150 C | Reel | 1 Channel | Si | P-Channel | - 20 V | - 5.3 A | 28 mOhms | - 1.25 V | 17 nC | Enhancement | |||
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5,583
In-stock
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Nexperia | MOSFET 20V P-channel Trench MOSFET | 12 V | SMD/SMT | SOT-23-3 | - 55 C | + 150 C | Reel | 1 Channel | Si | P-Channel | - 20 V | - 3.5 A | 48 mOhms | - 1.25 V | 11 nC | Enhancement | |||
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GET PRICE |
282,900
In-stock
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Diodes Incorporated | MOSFET P-Ch -20V Enh FET 12Vgss -15A 1.4W | +/- 12 V | SMD/SMT | SOT-323-3 | - 55 C | + 150 C | Reel | 1 Channel | Si | P-Channel | - 20 V | - 3 A | 123 mOhms | - 1.25 V | 7.3 nC | Enhancement |
