- Maximum Operating Temperature :
- Number of Channels :
- Id - Continuous Drain Current :
- Rds On - Drain-Source Resistance :
- Vgs th - Gate-Source Threshold Voltage :
- Tradename :
31 products
| IMAGE | PART NO. | PRICE | QUANTITY | STOCK | MANUFACTURE | DESCRIPTION | Vgs - Gate-Source Voltage | Mounting Style | Package / Case | Minimum Operating Temperature | Maximum Operating Temperature | Packaging | Number of Channels | Technology | Transistor Polarity | Vds - Drain-Source Breakdown Voltage | Id - Continuous Drain Current | Rds On - Drain-Source Resistance | Vgs th - Gate-Source Threshold Voltage | Qg - Gate Charge | Channel Mode | Tradename | |
|---|---|---|---|---|---|---|---|---|---|---|---|---|---|---|---|---|---|---|---|---|---|---|---|
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5,750
In-stock
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Nexperia | MOSFET PMV65XP/TO-236AB/REEL 11" Q3/T | +/- 12 V | SMD/SMT | SOT-23-3 | - 55 C | + 150 C | Reel | 1 Channel | Si | P-Channel | - 20 V | - 4.3 A | 58 mOhms | - 900 mV | 7.7 nC | Enhancement | ||||
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5,962
In-stock
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Siliconix / Vishay | MOSFET P-Channel 20V AEC-Q101 Qualified | +/- 12 V | SMD/SMT | TO-236-3 | - 55 C | + 175 C | Reel | 1 Channel | Si | P-Channel | - 20 V | - 3.2 A | 0.08 Ohms | - 1.5 V | 5.5 nC | Enhancement | TrenchFET | |||
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6,700
In-stock
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Infineon Technologies | MOSFET SMALL SIGNAL+P-CH | +/- 12 V | SMD/SMT | TSOP-6 | - 55 C | + 150 C | Reel | 1 Channel | Si | P-Channel | - 20 V | - 4.7 A | 110 mOhms | - 1.2 V | - 1.3 nC | Enhancement | ||||
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1,904
In-stock
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Infineon Technologies | MOSFET P-Ch -20V -14.9A DSO-8 OptiMOS P | +/- 12 V | SMD/SMT | SO-8 | - 55 C | + 150 C | Reel | 1 Channel | Si | P-Channel | - 20 V | - 14.9 A | 6.7 mOhms | - 1.2 V | - 88 nC | Enhancement | OptiMOS | |||
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4,882
In-stock
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Infineon Technologies | MOSFET SMALL SIGNAL+P-CH | +/- 12 V | SMD/SMT | TSOP-6 | - 55 C | + 150 C | Reel | 1 Channel | Si | P-Channel | - 20 V | - 6 A | 29 mOhms | - 1.2 V | - 20 nC | Enhancement | ||||
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2,074
In-stock
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Infineon Technologies | MOSFET P-Ch -20V -8.9A DSO-8 OptiMOS P | +/- 12 V | SMD/SMT | SO-8 | - 55 C | + 150 C | Reel | 1 Channel | Si | P-Channel | - 20 V | - 8.9 A | 15 mOhms | - 1.2 V | - 39 nC | Enhancement | OptiMOS | |||
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2,615
In-stock
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Diodes Incorporated | MOSFET 20V P-Ch Enh FET 12Vgss 29nC | +/- 12 V | SMD/SMT | PowerDI3333-8 | - 55 C | + 150 C | Reel | 1 Channel | Si | P-Channel | - 20 V | - 40 A | 9 mOhms | - 400 mV | 85 nC | Enhancement | PowerDI | |||
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4,692
In-stock
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Siliconix / Vishay | MOSFET P Ch -20Vds 12Vgs AEC-Q101 Qualified | +/- 12 V | SMD/SMT | TSOP-6 | - 55 C | + 175 C | Reel | 1 Channel | Si | P-Channel | - 20 V | - 7.4 A | 0.049 Ohms | - 1.4 V | 10.3 nC | Enhancement | ||||
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5,865
In-stock
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onsemi | MOSFET PCH 1.8V DRIVE SERIE | +/- 12 V | SMD/SMT | SOT-26-6 | + 150 C | Reel | 1 Channel | Si | P-Channel | - 20 V | - 6 A | 30 mOhms | - 1.4 V | 10.5 nC | Enhancement | |||||
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14,998
In-stock
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Infineon Technologies | MOSFET P-Ch -20V -390mA SOT-323-3 | +/- 12 V | SMD/SMT | SOT-323-3 | - 55 C | + 150 C | Reel | 1 Channel | Si | P-Channel | - 20 V | - 390 mA | 700 mOhms | - 1.2 V | - 620 pC | Enhancement | ||||
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13,771
In-stock
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Infineon Technologies | MOSFET P-Ch -20V -630mA SOT-323-3 | +/- 12 V | SMD/SMT | SOT-323-3 | - 55 C | + 150 C | Reel | 1 Channel | Si | P-Channel | - 20 V | - 630 mA | 379 mOhms | - 1.2 V | - 1.3 nC | Enhancement | ||||
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3,035
In-stock
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Infineon Technologies | MOSFET P-Ch -20V -1.5A SOT-23-3 | +/- 12 V | SMD/SMT | SOT-23-3 | - 55 C | + 150 C | Reel | 1 Channel | Si | P-Channel | - 20 V | - 1.5 A | 105 mOhms | - 1.2 V | - 3.6 nC | Enhancement | ||||
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11,038
In-stock
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Infineon Technologies | MOSFET P-Ch -20V -390mA SOT-323-3 | +/- 12 V | SMD/SMT | SOT-323-3 | - 55 C | + 150 C | Reel | 1 Channel | Si | P-Channel | - 20 V | - 390 mA | 700 mOhms | - 1.2 V | - 620 pC | Enhancement | ||||
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4,916
In-stock
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Nexperia | MOSFET 20V P-channel Trench MOSFET | +/- 12 V | SMD/SMT | SOT-23-3 | - 55 C | + 150 C | Reel | 1 Channel | Si | P-Channel | - 20 V | - 3.3 A | 67 mOhms | - 1.25 V | 9 nC | Enhancement | ||||
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5,327
In-stock
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Nexperia | MOSFET 20V P-channel Trench MOSFET | +/- 12 V | SMD/SMT | SOT-23-3 | - 55 C | + 150 C | Reel | 1 Channel | Si | P-Channel | - 20 V | - 3.3 A | 67 mOhms | - 1.25 V | 9 nC | Enhancement | ||||
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3,463
In-stock
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Infineon Technologies | MOSFET P-Ch -20V -1.5A SOT-363-6 | +/- 12 V | SMD/SMT | SOT-363-6 | - 55 C | + 150 C | Reel | 1 Channel | Si | P-Channel | - 20 V | - 1.5 A | 131 mOhms | - 1.2 V | - 5.7 nC | Enhancement | ||||
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6,920
In-stock
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Nexperia | MOSFET PMV30XPEA/TO-236AB/REEL 7" Q3/ | +/- 12 V | SMD/SMT | SOT-23-3 | - 55 C | + 150 C | Reel | 1 Channel | Si | P-Channel | - 20 V | - 5.3 A | 28 mOhms | - 1.25 V | 17 nC | Enhancement | ||||
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2,044
In-stock
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Infineon Technologies | MOSFET SMALL SIGNAL+P-CH | +/- 12 V | SMD/SMT | TSOP-6 | - 55 C | + 150 C | Reel | 1 Channel | Si | P-Channel | - 20 V | - 6 A | 29 mOhms | - 1.2 V | - 20 nC | Enhancement | ||||
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3,885
In-stock
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Infineon Technologies | MOSFET P-Ch -20V -1.5A SOT-23-3 | +/- 12 V | SMD/SMT | SOT-23-3 | - 55 C | + 150 C | Reel | 1 Channel | Si | P-Channel | - 20 V | - 1.5 A | 105 mOhms | - 1.2 V | - 3.6 nC | Enhancement | ||||
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4,140
In-stock
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Infineon Technologies | MOSFET P-Ch -20V -1.5A SOT-23-3 | +/- 12 V | SMD/SMT | SOT-23-3 | - 55 C | + 150 C | Reel | 1 Channel | Si | P-Channel | - 20 V | - 1.5 A | 105 mOhms | - 1.2 V | - 3.6 nC | Enhancement | ||||
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GET PRICE |
282,900
In-stock
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Diodes Incorporated | MOSFET P-Ch -20V Enh FET 12Vgss -15A 1.4W | +/- 12 V | SMD/SMT | SOT-323-3 | - 55 C | + 150 C | Reel | 1 Channel | Si | P-Channel | - 20 V | - 3 A | 123 mOhms | - 1.25 V | 7.3 nC | Enhancement | |||
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3,924
In-stock
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Infineon Technologies | MOSFET P-Ch -20V -1.5A SOT-363-6 | +/- 12 V | SMD/SMT | SOT-363-6 | - 55 C | + 150 C | Reel | 1 Channel | Si | P-Channel | - 20 V | - 1.5 A | 131 mOhms | - 1.2 V | - 5.7 nC | Enhancement | ||||
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3,628
In-stock
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Infineon Technologies | MOSFET P-Ch -20V -630mA SOT-323-3 | +/- 12 V | SMD/SMT | SOT-323-3 | - 55 C | + 150 C | Reel | 1 Channel | Si | P-Channel | - 20 V | - 630 mA | 379 mOhms | - 1.2 V | - 1.3 nC | Enhancement | ||||
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80
In-stock
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onsemi | MOSFET 20V 4.2A 60MOHM PFET | +/- 12 V | SMD/SMT | SOT-363-6 | - 55 C | + 150 C | Reel | 1 Channel | Si | P-Channel | - 20 V | - 3.2 A | 55 mOhms | - 1.2 V | 10 nC | Enhancement | ||||
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835
In-stock
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Nexperia | MOSFET 20 V, 2 A P-channel Trench MOSFET | +/- 12 V | SMD/SMT | SOT-363-6 | - 55 C | + 150 C | Reel | 1 Channel | Si | P-Channel | - 20 V | - 2 A | 90 mOhms | - 1.15 V | 7.2 nC | Enhancement | ||||
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3,498
In-stock
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Texas instruments | MOSFET 20V Pch MOSFET | +/- 12 V | SMD/SMT | VSON-Clip-8 | - 55 C | + 150 C | Reel | 1 Channel | Si | P-Channel | - 20 V | - 104 A | 150 mOhms | - 650 mV | 10.8 nC | Enhancement | ||||
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5,900
In-stock
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Diodes Incorporated | MOSFET MOSFET BVDSS: 8V-24V | +/- 12 V | SMD/SMT | SOT-23-3 | - 55 C | + 150 C | Reel | 1 Channel | Si | P-Channel | - 20 V | - 2.4 A | 136 mOhms | - 1 V | 3.4 nC | Enhancement | ||||
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VIEW | Infineon Technologies | MOSFET P-Ch -20V -630mA SOT-323-3 | +/- 12 V | SMD/SMT | SOT-323-3 | - 55 C | + 150 C | Reel | 1 Channel | Si | P-Channel | - 20 V | - 630 mA | 379 mOhms | - 1.2 V | - 1.3 nC | Enhancement | ||||
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VIEW | Renesas Electronics | MOSFET MOSFET | +/- 12 V | SC-88-6 | - 55 C | + 150 C | Reel | 2 Channel | Si | P-Channel | - 20 V | - 250 mA | 1450 mOhms at 4.5 V | Enhancement | |||||||
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2,500
In-stock
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Infineon Technologies | MOSFET P-Ch -20V -14.9A DSO-8 OptiMOS P | +/- 12 V | SMD/SMT | SO-8 | - 55 C | + 150 C | Reel | 1 Channel | Si | P-Channel | - 20 V | - 14.9 A | 6.7 mOhms | - 1.2 V | - 88 nC | Enhancement |
