- Manufacture :
- Vgs - Gate-Source Voltage :
- Package / Case :
- Number of Channels :
- Id - Continuous Drain Current :
- Rds On - Drain-Source Resistance :
- Vgs th - Gate-Source Threshold Voltage :
- Applied Filters :
8 products
| IMAGE | PART NO. | PRICE | QUANTITY | STOCK | MANUFACTURE | DESCRIPTION | Vgs - Gate-Source Voltage | Mounting Style | Package / Case | Minimum Operating Temperature | Maximum Operating Temperature | Packaging | Number of Channels | Technology | Transistor Polarity | Vds - Drain-Source Breakdown Voltage | Id - Continuous Drain Current | Rds On - Drain-Source Resistance | Vgs th - Gate-Source Threshold Voltage | Qg - Gate Charge | Channel Mode | Tradename | |
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5,108
In-stock
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Diodes Incorporated | MOSFET Mosfet H-Bridge 60/-60V 1.8/-1.4A | +/- 20 V, +/- 20 V | SMD/SMT | SO-8 | - 55 C | + 150 C | Reel | 4 Channel | Si | N-Channel, P-Channel | 60 V, - 60 V | 1.8 A, - 1.42 A | 250 mOhms, 600 mOhms | 1 V, - 3 V | 3.2 nC, 5.1 nC | Enhancement | |||
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GET PRICE |
2,430
In-stock
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Infineon Technologies | MOSFET N and P-Ch 60V 3.1A, -2A DSO-8 | +/- 20 V, +/- 20 V | SMD/SMT | SO-8 | - 55 C | + 150 C | Reel | 2 Channel | Si | N-Channel, P-Channel | 60 V, - 60 V | 3.1 A, - 2 A | 70 mOhms, 190 mOhms | 1.2 V, - 2 V | 22.5 nC, 20 nC | Enhancement | |||
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GET PRICE |
1,693
In-stock
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Infineon Technologies | MOSFET N and P-Ch 60V 3.1A, -2A DSO-8 | +/- 20 V, +/- 20 V | SMD/SMT | SO-8 | - 55 C | + 150 C | Reel | 2 Channel | Si | N-Channel, P-Channel | 60 V, - 60 V | 3.1 A, - 2 A | 70 mOhms, 190 mOhms | 1.2 V, - 2 V | 22.5 nC, 20 nC | Enhancement | SIPMOS | ||
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2,124
In-stock
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Diodes Incorporated | MOSFET 31V to 100V Comp Pair Enh FET 60V | 20 V | SMD/SMT | SO-8 | - 55 C | + 150 C | Reel | 2 Channel | Si | N-Channel, P-Channel | 60 V, - 60 V | 5.1 A, - 3.1 A | 55 mOhms, 130 mOhms | 3 V, - 3 V | 20.8 nC, 9.5 nC | Enhancement | |||
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243
In-stock
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onsemi | MOSFET PCH+NCH 4V DRIVE SERIES | +/- 20 V, +/- 20 V | SMD/SMT | VEC-8 | - 55 C | + 150 C | Reel | 2 Channel | Si | N-Channel, P-Channel | 60 V, - 60 V | 3 A, - 2.5 A | 116 mOhms, 194 mOhms | 1.2 V, - 2.6 V | 10 nC, 11 nC | Enhancement | |||
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GET PRICE |
2,000
In-stock
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Diodes Incorporated | MOSFET MOSFET BVDSS | +/- 20 V, +/- 20 V | SMD/SMT | PowerDI3333-8 | - 55 C | + 150 C | Reel | 2 Channel | Si | N-Channel, P-Channel | 60 V, - 60 V | 3.1 A, - 2.4 A | 60 mOhms, 115 mOhms | 1 V, - 3 V | 11.5 nC, 8.9 nC | Enhancement | |||
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GET PRICE |
3,000
In-stock
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onsemi | MOSFET PCH+NCH 4V DRIVE SERIES | +/- 20 V, +/- 20 V | SMD/SMT | VEC-8 | - 55 C | + 150 C | Reel | 2 Channel | Si | N-Channel, P-Channel | 60 V, - 60 V | 3 A, - 2.5 A | 116 mOhms, 194 mOhms | 1.2 V, - 2.6 V | 10 nC, 11 nC | Enhancement | |||
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GET PRICE |
29,997
In-stock
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Diodes Incorporated | MOSFET 60V TRENCH MOSFET 20V VGS P-Channel | +/- 20 V, +/- 20 V | SMD/SMT | SO-8 | - 55 C | + 150 C | Reel | 2 Channel | Si | N-Channel, P-Channel | 60 V, - 60 V | 3.6 A, - 2.6 A | 55 mOhms, 125 mOhms, | 1 V, -1 V | 20.4 nC, 12.1 nC | Enhancement |
