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6 products
IMAGE PART NO. PRICE QUANTITY STOCK MANUFACTURE DESCRIPTION Vgs - Gate-Source Voltage Mounting Style Package / Case Minimum Operating Temperature Maximum Operating Temperature Packaging Number of Channels Technology Transistor Polarity Vds - Drain-Source Breakdown Voltage Id - Continuous Drain Current Rds On - Drain-Source Resistance Vgs th - Gate-Source Threshold Voltage Qg - Gate Charge Channel Mode Tradename
IXTH16P60P
1+
$8.450
10+
$7.640
25+
$7.280
100+
$6.320
RFQ
171
In-stock
IXYS MOSFET -16.0 Amps -600V 0.720 Rds 20 V Through Hole TO-247-3 - 55 C + 150 C Tube 1 Channel Si P-Channel - 600 V - 16 A 720 mOhms - 4 V 92 nC Enhancement PolarP
IXTT16P60P
1+
$9.520
10+
$8.610
25+
$8.210
100+
$7.120
VIEW
RFQ
IXYS MOSFET -16.0 Amps -600V 0.720 Rds 20 V SMD/SMT TO-268-3 - 55 C + 150 C Tube 1 Channel Si P-Channel - 600 V - 16 A 720 mOhms - 4 V 92 nC Enhancement PolarP
IXTR32P60P
1+
$16.230
10+
$14.920
25+
$14.310
100+
$12.600
RFQ
37
In-stock
IXYS MOSFET -18 Amps -600V 0.385 Rds 20 V Through Hole TO-247-3 - 55 C + 150 C Tube   Si P-Channel - 600 V - 18 A 385 mOhms - 4 V 196 nC Enhancement PolarP
IXTR16P60P
1+
$10.420
10+
$9.420
25+
$8.980
100+
$7.800
RFQ
2
In-stock
IXYS MOSFET -10.0 Amps -600V 0.790 Rds 20 V Through Hole TO-247-3 - 55 C + 150 C Tube   Si P-Channel - 600 V - 10 A 790 mOhms - 4 V 92 nC Enhancement PolarP
IXTX32P60P
Per Unit
$26.000
RFQ
900
In-stock
IXYS MOSFET -32 Amps -600V 0.350 Rds 20 V Through Hole PLUS-247-3 - 55 C + 150 C Tube   Si P-Channel - 600 V - 32 A 350 mOhms - 4 V 196 nC Enhancement PolarP
IXTK32P60P
25+
$13.140
100+
$11.580
250+
$11.010
500+
$10.300
VIEW
RFQ
IXYS MOSFET -32 Amps -600V 0.350 Rds 20 V Through Hole TO-264-3 - 55 C + 150 C Tube   Si P-Channel - 600 V - 32 A 350 mOhms - 4 V 196 nC Enhancement PolarP
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