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IMAGE PART NO. PRICE QUANTITY STOCK MANUFACTURE DESCRIPTION Vgs - Gate-Source Voltage Mounting Style Package / Case Minimum Operating Temperature Maximum Operating Temperature Packaging Number of Channels Technology Transistor Polarity Vds - Drain-Source Breakdown Voltage Id - Continuous Drain Current Rds On - Drain-Source Resistance Vgs th - Gate-Source Threshold Voltage Qg - Gate Charge Channel Mode Tradename
IXTH10P60
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494
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IXYS MOSFET -10 Amps -600V 1 Rds 20 V Through Hole TO-247-3 - 55 C + 150 C Tube 1 Channel Si P-Channel - 600 V - 10 A 1 Ohms     Enhancement  
IXTH16P60P
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171
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IXYS MOSFET -16.0 Amps -600V 0.720 Rds 20 V Through Hole TO-247-3 - 55 C + 150 C Tube 1 Channel Si P-Channel - 600 V - 16 A 720 mOhms - 4 V 92 nC Enhancement PolarP
IXTT10P60
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30
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IXYS MOSFET -10 Amps -600V 1 Rds   Through Hole TO-268-3     Tube   Si P-Channel - 600 V - 10 A 1 Ohms        
IXTR32P60P
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37
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IXYS MOSFET -18 Amps -600V 0.385 Rds 20 V Through Hole TO-247-3 - 55 C + 150 C Tube   Si P-Channel - 600 V - 18 A 385 mOhms - 4 V 196 nC Enhancement PolarP
IXTR16P60P
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2
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IXYS MOSFET -10.0 Amps -600V 0.790 Rds 20 V Through Hole TO-247-3 - 55 C + 150 C Tube   Si P-Channel - 600 V - 10 A 790 mOhms - 4 V 92 nC Enhancement PolarP
IXTX32P60P
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900
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IXYS MOSFET -32 Amps -600V 0.350 Rds 20 V Through Hole PLUS-247-3 - 55 C + 150 C Tube   Si P-Channel - 600 V - 32 A 350 mOhms - 4 V 196 nC Enhancement PolarP
IXTK32P60P
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IXYS MOSFET -32 Amps -600V 0.350 Rds 20 V Through Hole TO-264-3 - 55 C + 150 C Tube   Si P-Channel - 600 V - 32 A 350 mOhms - 4 V 196 nC Enhancement PolarP
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