- Mounting Style :
- Package / Case :
- Id - Continuous Drain Current :
- Rds On - Drain-Source Resistance :
- Vgs th - Gate-Source Threshold Voltage :
- Qg - Gate Charge :
- Applied Filters :
6 products
IMAGE | PART NO. | PRICE | QUANTITY | STOCK | MANUFACTURE | DESCRIPTION | Vgs - Gate-Source Voltage | Mounting Style | Package / Case | Minimum Operating Temperature | Maximum Operating Temperature | Packaging | Number of Channels | Technology | Transistor Polarity | Vds - Drain-Source Breakdown Voltage | Id - Continuous Drain Current | Rds On - Drain-Source Resistance | Vgs th - Gate-Source Threshold Voltage | Qg - Gate Charge | Channel Mode | Tradename | |
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1,064
In-stock
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IXYS | MOSFET -96 Amps -85V 0.013 Rds | 15 V | Through Hole | TO-220-3 | - 55 C | + 150 C | Tube | 1 Channel | Si | P-Channel | - 85 V | - 96 A | 13 mOhms | Enhancement | |||||||
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255
In-stock
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IXYS | MOSFET -96 Amps -85V 0.013 Rds | 15 V | Through Hole | TO-247-3 | - 55 C | + 150 C | Tube | 1 Channel | Si | P-Channel | - 85 V | - 96 A | 13 mOhms | - 2 V to - 4 V | 180 nC | Enhancement | |||||
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261
In-stock
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IXYS | MOSFET -96 Amps -85V 0.013 Rds | 15 V | SMD/SMT | TO-263-3 | - 55 C | + 150 C | Tube | 1 Channel | Si | P-Channel | - 85 V | - 96 A | 13 mOhms | - 2 V | 180 nC | Enhancement | |||||
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110
In-stock
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IXYS | MOSFET 24 Amps 85V 0.065 Rds | 15 V | Through Hole | TO-220-3 | - 55 C | + 150 C | Tube | Si | P-Channel | - 85 V | - 24 A | 65 mOhms | - 4.5 V | 41 nC | Enhancement | TrenchP | |||||
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140
In-stock
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IXYS | MOSFET 24 Amps 85V 0.065 Rds | 15 V | SMD/SMT | TO-263-3 | - 55 C | + 150 C | Tube | Si | P-Channel | - 85 V | - 24 A | 65 mOhms | - 4.5 V | 41 nC | Enhancement | TrenchP | |||||
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VIEW | IXYS | MOSFET -50 Amps - 500 V 0.055 W Rds | 20 V | Through Hole | TO-247-3 | - 55 C | + 150 C | Tube | 1 Channel | Si | P-Channel | - 85 V | - 50 A | 55 mOhms | - 5 V | 150 nC | Enhancement |