- Vgs - Gate-Source Voltage :
- Mounting Style :
- Maximum Operating Temperature :
- Number of Channels :
- Transistor Polarity :
- Rds On - Drain-Source Resistance :
- Qg - Gate Charge :
- Tradename :
14 products
IMAGE | PART NO. | PRICE | QUANTITY | STOCK | MANUFACTURE | DESCRIPTION | Vgs - Gate-Source Voltage | Mounting Style | Package / Case | Minimum Operating Temperature | Maximum Operating Temperature | Packaging | Number of Channels | Technology | Transistor Polarity | Vds - Drain-Source Breakdown Voltage | Id - Continuous Drain Current | Rds On - Drain-Source Resistance | Vgs th - Gate-Source Threshold Voltage | Qg - Gate Charge | Channel Mode | Tradename | |
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4,226
In-stock
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onsemi | MOSFET NFET 30V 191A 2MOHM | 20 V | SMD/SMT | SO-FL-8 | - 55 C | + 150 C | Reel | 1 Channel | Si | N-Channel | 30 V | 191 A | 2.3 mOhms | 2.5 V | 88 nC | Enhancement | |||||
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3,666
In-stock
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Fairchild Semiconductor | MOSFET NCh 30V 116A 2.4mOhm | SMD/SMT | Power-56-8 | - 55 C | + 150 C | Reel | Si | N-Channel | 30 V | 116 A | 2.4 mOhms | 2.5 V | 88 nC | Enhancement | PowerTrench | ||||||
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2,000
In-stock
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Diodes Incorporated | MOSFET MOSFET BVDSS: 31V-40 PowerDI3333-8 T&R 2K | 20 V | SMD/SMT | PowerDI3333-8 | - 55 C | + 150 C | Reel | 1 Channel | Si | N-Channel | 30 V | 10.5 A | 15 mOhms | 2.5 V | 12.5 nC | Enhancement | |||||
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755
In-stock
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STMicroelectronics | MOSFET N/P-Ch 30V 8/5 Amp | 16 V | SMD/SMT | SOIC-8 | - 55 C | + 150 C | Reel | 2 Channel | Si | N-Channel, P-Channel | 30 V | 8 A | 22 mOhms | 2.5 V | 7 nC | Enhancement | |||||
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3,120
In-stock
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Diodes Incorporated | MOSFET N-Ch Enh Mode FET 30Vdss 20Vgss | 20 V | SMD/SMT | PowerDI3333-8 | - 55 C | + 150 C | Reel | 1 Channel | Si | N-Channel | 30 V | 30 A | 8 mOhms | 2.5 V | 37 nC | Enhancement | |||||
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1,057
In-stock
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onsemi | MOSFET NFET SO8FL 30V 75A 5MOHM | 20 V | SMD/SMT | SO-FL-8 | - 55 C | + 150 C | Reel | 1 Channel | Si | N-Channel | 30 V | 75 A | 6 mOhms | 2.5 V | 25 nC | ||||||
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2,060
In-stock
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Diodes Incorporated | MOSFET 30V N-Ch Enh Mode 20Vgss 1.6W 2075pF | 20 V | SMD/SMT | TO-252-3 | - 55 C | + 150 C | Reel | 1 Channel | Si | N-Channel | 30 V | 43 A | 10 mOhms | 2.5 V | 16.1 nC | Enhancement | PowerDI | ||||
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2,159
In-stock
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onsemi | MOSFET NFET SO8 30V 11.4A 9MOHM | SMD/SMT | SOIC-8 | Reel | Si | N-Channel | 30 V | 11.6 A | 12 mOhms | 2.5 V | 15 nC | ||||||||||
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1,233
In-stock
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onsemi | MOSFET NFET DPAK 30V 38A 11MOHM | Through Hole | TO-247-3 | Tube | 1 Channel | Si | N-Channel | 30 V | 11.6 A | 21 mOhms | 2.5 V | 8.2 nC | |||||||||
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248
In-stock
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STMicroelectronics | MOSFET N-Ch 30V 0.0037 Ohm 80A STripFET VI | 20 V | SMD/SMT | TO-252-3 | Reel | 1 Channel | Si | N-Channel | 30 V | 80 A | 3.7 mOhms | 2.5 V | 20 nC | ||||||||
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4,353
In-stock
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Toshiba | MOSFET Small Signal Mosfet | 20 V | SOT-23-3 | - 55 C | + 150 C | Reel | Si | N-Channel | 30 V | 3 A | 140 mOhms | 2.5 V | 1.7 nC | Enhancement | |||||||
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650
In-stock
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IR / Infineon | MOSFET 30V 1 N-CH HEXFET 3mOhms 75nC | 20 V | SMD/SMT | TO-252-3 | - 55 C | + 175 C | Reel | 1 Channel | Si | N-Channel | 30 V | 260 A | 3 mOhms | 2.5 V | 75 nC | Enhancement | |||||
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VIEW | Vishay Semiconductors | MOSFET 30V 100A 136W N-Channel MOSFET | +/- 20 V | SMD/SMT | TO-252-3 | - 55 C | + 175 C | Reel | 1 Channel | Si | N-Channel | 30 V | 100 A | 0.0028 Ohms | 2.5 V | 124 nC | Enhancement | TrenchFET | ||||
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1,502
In-stock
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STMicroelectronics | MOSFET N-Ch 30V 2.7mOhm 150A STripFET VI | Through Hole | TO-220-3 | - 55 C | + 175 C | Tube | Si | N-Channel | 30 V | 150 A | 4.5 mOhms | 2.5 V | 42 nC |