- Manufacture :
- Package / Case :
- Maximum Operating Temperature :
- Vgs th - Gate-Source Threshold Voltage :
- Qg - Gate Charge :
4 products
| IMAGE | PART NO. | PRICE | QUANTITY | STOCK | MANUFACTURE | DESCRIPTION | Vgs - Gate-Source Voltage | Mounting Style | Package / Case | Minimum Operating Temperature | Maximum Operating Temperature | Packaging | Number of Channels | Technology | Transistor Polarity | Vds - Drain-Source Breakdown Voltage | Id - Continuous Drain Current | Rds On - Drain-Source Resistance | Vgs th - Gate-Source Threshold Voltage | Qg - Gate Charge | Channel Mode | Tradename | |
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2,969
In-stock
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onsemi | MOSFET FETKY SO8FL 30V 129A 1.3M | 20 V | SMD/SMT | SO-FL-8 | - 55 C | + 150 C | Reel | 1 Channel | Si | N-Channel | 30 V | 207 A | 1.4 mOhms | 1.7 V | 84 nC | |||||
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3,979
In-stock
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Infineon Technologies | MOSFET N-Ch 30V 100A TDSON-8 OptiMOS 3M | 20 V | SMD/SMT | TDSON-8 | - 55 C | + 150 C | Reel | 1 Channel | Si | N-Channel | 30 V | 30 A | 1.4 mOhms | Enhancement | OptiMOS | |||||
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1,500
In-stock
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onsemi | MOSFET NFET SO8FL 30V 138A 2.1MO | 20 V | SMD/SMT | SO-FL-8 | - 55 C | + 175 C | Reel | 1 Channel | Si | N-Channel | 30 V | 159 A | 1.4 mOhms | 1.3 V | 45.2 nC | Enhancement | ||||
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VIEW | Toshiba | MOSFET X35PBF Power MOSFET Trans VGS4.5VVDS30V | 20 V | SMD/SMT | SOP-Advance-8 | - 55 C | + 150 C | Reel | 1 Channel | Si | N-Channel | 30 V | 60 A | 1.4 mOhms | 1.3 V to 2.3 V | 46 nC | Enhancement |
