- Package / Case :
- Minimum Operating Temperature :
- Maximum Operating Temperature :
- Id - Continuous Drain Current :
- Qg - Gate Charge :
26 products
| IMAGE | PART NO. | PRICE | QUANTITY | STOCK | MANUFACTURE | DESCRIPTION | Vgs - Gate-Source Voltage | Mounting Style | Package / Case | Minimum Operating Temperature | Maximum Operating Temperature | Packaging | Number of Channels | Technology | Transistor Polarity | Vds - Drain-Source Breakdown Voltage | Id - Continuous Drain Current | Rds On - Drain-Source Resistance | Vgs th - Gate-Source Threshold Voltage | Qg - Gate Charge | Channel Mode | Tradename | |
|---|---|---|---|---|---|---|---|---|---|---|---|---|---|---|---|---|---|---|---|---|---|---|---|
|
|
10,835
In-stock
|
Infineon Technologies | MOSFET N-Ch 30V 30A DPAK-2 OptiMOS-T2 | 16 V | SMD/SMT | TO-252-3 | - 55 C | + 175 C | Reel | 1 Channel | Si | N-Channel | 30 V | 30 A | 9 mOhms | Enhancement | OptiMOS | |||||
|
|
3,854
In-stock
|
Fairchild Semiconductor | MOSFET 30V N-Channel PowerTrench | 20 V | SMD/SMT | TO-252-3 | - 55 C | + 175 C | Reel | 1 Channel | Si | N-Channel | 30 V | 58 A | 9 mOhms | Enhancement | PowerTrench | |||||
|
|
1,888
In-stock
|
Fairchild Semiconductor | MOSFET 30V N-CH POWER TRENCH SYNCFET | 20 V | SMD/SMT | SO-8 | - 55 C | + 150 C | Reel | 1 Channel | Si | N-Channel | 30 V | 13.5 A | 9 mOhms | Enhancement | PowerTrench SyncFET | |||||
|
|
2,940
In-stock
|
IR / Infineon | MOSFET MOSFT 30V 15A 7.5mOhm 37nC | 12 V | SMD/SMT | SO-8 | Reel | 1 Channel | Si | N-Channel | 30 V | 15 A | 9 mOhms | 37 nC | ||||||||
|
|
3,860
In-stock
|
onsemi | MOSFET NFET SO8 30V 9.9A 12.5mOhm | 20 V | SMD/SMT | SOIC-8 | - 55 C | + 150 C | Reel | 1 Channel | Si | N-Channel | 30 V | 12 A | 9 mOhms | Enhancement | ||||||
|
|
800
In-stock
|
IR / Infineon | MOSFET 30V 1 N-CH HEXFET 6mOhms 93.3nC | 16 V | SMD/SMT | TO-252-3 | - 55 C | + 175 C | Reel | 1 Channel | Si | N-Channel | 30 V | 140 A | 9 mOhms | 93.3 nC | Enhancement | |||||
|
|
4,230
In-stock
|
onsemi | MOSFET NFET SO8FL 30V | 20 V | SMD/SMT | SO-FL-8 | - 55 C | + 150 C | Reel | 1 Channel | Si | N-Channel | 30 V | 47 A | 9 mOhms | |||||||
|
|
547
In-stock
|
IR / Infineon | MOSFET MOSFT 30V 140A 6mOhm 93.3nC Log Lvl | 16 V | SMD/SMT | TO-252-3 | - 55 C | + 175 C | Reel | 1 Channel | Si | N-Channel | 30 V | 140 A | 9 mOhms | 1 V | 140 nC | |||||
|
|
1,620
In-stock
|
Diodes Incorporated | MOSFET MOSFET BVDSS: 25V-30 PowerDI3333-8 T&R 2K | 12 V | SMD/SMT | PowerDI3333-8 | - 55 C | + 150 C | Reel | 1 Channel | Si | N-Channel | 30 V | 9.5 A | 9 mOhms | 1 V | 45.7 nC | Enhancement | DIOFET | |||
|
|
2,569
In-stock
|
Diodes Incorporated | MOSFET MOSFET BVDSS: 25V-30 SO-8,2.5K | 12 V | SMD/SMT | SO-8 | - 55 C | + 150 C | Reel | 1 Channel | Si | N-Channel | 30 V | 9.8 A | 9 mOhms | 43 nC | Enhancement | DIOFET | ||||
|
|
2,395
In-stock
|
onsemi | MOSFET NFET 30V 58A 9MOHM | 20 V | SMD/SMT | TO-252-3 | - 55 C | + 175 C | Reel | 1 Channel | Si | N-Channel | 30 V | 11.5 A | 9 mOhms | Enhancement | ||||||
|
|
2,472
In-stock
|
Diodes Incorporated | MOSFET DIOFET MOSFETN-CHAN ENH MDE SCHOT DIO... | 12 V | SMD/SMT | SO-8 | - 55 C | + 150 C | Reel | 1 Channel | Si | N-Channel | 30 V | 10.4 A | 9 mOhms | 1 V | 45.7 nC | Enhancement | ||||
|
|
2,150
In-stock
|
onsemi | MOSFET NFET DPAK 30V 41A 9MOHM | SMD/SMT | TO-252-3 | Tube | 1 Channel | Si | N-Channel | 30 V | 9 A | 9 mOhms | ||||||||||
|
|
3,903
In-stock
|
Diodes Incorporated | MOSFET DIOFET MOSFETN-CHAN ENH MDE SCHOT DIO... | 12 V | SMD/SMT | SO-8 | - 55 C | + 150 C | Reel | 1 Channel | Si | N-Channel | 30 V | 9.8 A | 9 mOhms | 1 V | 43 nC | Enhancement | ||||
|
|
36
In-stock
|
Fairchild Semiconductor | MOSFET N-Ch PowerTrench Logic Level | 20 V | SMD/SMT | TO-263-3 | - 65 C | + 175 C | Reel | 1 Channel | Si | N-Channel | 30 V | 60 A | 9 mOhms | Enhancement | PowerTrench | |||||
|
|
199
In-stock
|
IR / Infineon | MOSFET MOSFT 30V 13.3A 9mOhm 41nC | 12 V | SMD/SMT | SO-8 | Reel | 1 Channel | Si | N-Channel | 30 V | 13.3 A | 9 mOhms | 41 nC | ||||||||
|
|
1,691
In-stock
|
Texas instruments | MOSFET 30V N Channel NexFET Power MOSFET | 10 V | SMD/SMT | VSONP-8 | - 55 C | + 150 C | Reel | 1 Channel | Si | N-Channel | 30 V | 100 A | 9 mOhms | 1.2 V | 5.4 nC | NexFET | ||||
|
|
3,800
In-stock
|
IR / Infineon | MOSFET 30V 1 N-CH HEXFET 7.5mOhms 37nC | 12 V | SMD/SMT | SO-8 | - 55 C | + 150 C | Tube | 1 Channel | Si | N-Channel | 30 V | 15 A | 9 mOhms | 2 V | 37 nC | |||||
|
|
2,480
In-stock
|
Diodes Incorporated | MOSFET NMOS SINGLE N-CHANNL 30V 16A | 20 V | SMD/SMT | SO-8 | - 55 C | + 150 C | Reel | 1 Channel | Si | N-Channel | 30 V | 16 A | 9 mOhms | Enhancement | ||||||
|
|
VIEW | Diodes Incorporated | MOSFET 30V N-Ch Enh FET 20Vgs Low Rdson | 20 V | SMD/SMT | PowerDI3333-8 | - 55 C | + 150 C | Reel | 1 Channel | Si | N-Channel | 30 V | 16 A | 9 mOhms | 1 V | 42 nC | Enhancement | ||||
|
|
VIEW | Infineon Technologies | MOSFET N-Ch 30V 40A DPAK-2 OptiMOS 3 | 20 V | SMD/SMT | TO-252-3 | - 55 C | + 175 C | Reel | 1 Channel | Si | N-Channel | 30 V | 40 A | 9 mOhms | Enhancement | OptiMOS | |||||
|
|
VIEW | Diodes Incorporated | MOSFET 30V N-Ch Enh FET 20Vgs Low Rdson | 20 V | SMD/SMT | PowerDI3333-8 | - 55 C | + 150 C | Reel | 1 Channel | Si | N-Channel | 30 V | 16 A | 9 mOhms | 1 V | 42 nC | Enhancement | ||||
|
|
25,000
In-stock
|
STMicroelectronics | MOSFET N-Ch 30 Volt 40 Amp | 20 V | SMD/SMT | TO-252-3 | - 55 C | + 175 C | Reel | 1 Channel | Si | N-Channel | 30 V | 40 A | 9 mOhms | Enhancement | ||||||
|
|
3,101
In-stock
|
IR / Infineon | MOSFET 30V 1 N-CH HEXFET 9mOhms 41nC | 12 V | SMD/SMT | SO-8 | - 55 C | + 150 C | Tube | 1 Channel | Si | N-Channel | 30 V | 13.3 A | 9 mOhms | 41 nC | Enhancement | |||||
|
|
336
In-stock
|
IR / Infineon | MOSFET 30V 1 N-CH HEXFET 6mOhms 93.3nC | 16 V | SMD/SMT | TO-252-3 | - 55 C | + 175 C | Tube | 1 Channel | Si | N-Channel | 30 V | 140 A | 9 mOhms | 93.3 nC | Enhancement | |||||
|
|
147
In-stock
|
IR / Infineon | MOSFET 30V 999A SO-8 | 20 V | SMD/SMT | PQFN-8 | - 55 C | + 150 C | Reel | 1 Channel | Si | N-Channel | 30 V | 14 A | 9 mOhms | 7.1 nC | Enhancement |
