- Package / Case :
- Maximum Operating Temperature :
- Qg - Gate Charge :
- Tradename :
7 products
IMAGE | PART NO. | PRICE | QUANTITY | STOCK | MANUFACTURE | DESCRIPTION | Vgs - Gate-Source Voltage | Mounting Style | Package / Case | Minimum Operating Temperature | Maximum Operating Temperature | Packaging | Number of Channels | Technology | Transistor Polarity | Vds - Drain-Source Breakdown Voltage | Id - Continuous Drain Current | Rds On - Drain-Source Resistance | Vgs th - Gate-Source Threshold Voltage | Qg - Gate Charge | Channel Mode | Tradename | |
---|---|---|---|---|---|---|---|---|---|---|---|---|---|---|---|---|---|---|---|---|---|---|---|
|
|
2,440
In-stock
|
Infineon Technologies | MOSFET N-Ch 30V 30A DPAK-2 OptiMOS | 20 V | SMD/SMT | TO-252-3 | - 55 C | + 175 C | Reel | 1 Channel | Si | N-Channel | 30 V | 30 A | 14.5 mOhms | 1.2 V | 19 nC | Enhancement | OptiMOS | |||
|
|
2,500
In-stock
|
Infineon Technologies | MOSFET N-Ch 30V 30A DPAK-2 OptiMOS | 20 V | SMD/SMT | TO-252-3 | - 55 C | + 175 C | Reel | 1 Channel | Si | N-Channel | 30 V | 30 A | 14.5 mOhms | 1.2 V | 19 nC | Enhancement | ||||
|
|
2,503
In-stock
|
IR / Infineon | MOSFET 30V 5nC SGL N-CH HEXFET Pwr MOSFET | 20 V | SMD/SMT | PQFN-8 | - 55 C | + 150 C | Reel | 1 Channel | Si | N-Channel | 30 V | 12 A | 14.5 mOhms | 1.8 V | 5.4 nC | SmallPowIR | ||||
|
|
2,669
In-stock
|
Fairchild Semiconductor | MOSFET Single PT7 N in MLP3.3x3.3 Combo | SMD/SMT | Power-33-8 | - 55 C | + 150 C | Reel | 1 Channel | Si | N-Channel | 30 V | 12 A | 14.5 mOhms | 3 V | 22 nC | ||||||
|
|
23,000
In-stock
|
Nexperia | MOSFET 30V N-channel Trench MOSFET | 20 V | SMD/SMT | DFN2020MD-6 | - 55 C | + 150 C | Reel | 1 Channel | Si | N-Channel | 30 V | 13 A | 14.5 mOhms | 1.5 V | 13.7 nC | Enhancement | ||||
|
|
VIEW | Toshiba | MOSFET N-Ch 30V FET 16A 25W 1350pF 20nC | SMD/SMT | SOP-Advance-8 | Reel | 1 Channel | Si | N-Channel | 30 V | 16 A | 14.5 mOhms | 20 nC | |||||||||
|
|
VIEW | Toshiba | MOSFET N-Ch 30V FET 13A 18W 1350pF 20nC | SMD/SMT | TSON-Advance-8 | Reel | 1 Channel | Si | N-Channel | 30 V | 13 A | 14.5 mOhms | 20 nC |