- Vgs - Gate-Source Voltage :
- Package / Case :
- Minimum Operating Temperature :
- Rds On - Drain-Source Resistance :
- Vgs th - Gate-Source Threshold Voltage :
- Qg - Gate Charge :
- Tradename :
7 products
| IMAGE | PART NO. | PRICE | QUANTITY | STOCK | MANUFACTURE | DESCRIPTION | Vgs - Gate-Source Voltage | Mounting Style | Package / Case | Minimum Operating Temperature | Maximum Operating Temperature | Packaging | Qualification | Number of Channels | Technology | Transistor Polarity | Vds - Drain-Source Breakdown Voltage | Id - Continuous Drain Current | Rds On - Drain-Source Resistance | Vgs th - Gate-Source Threshold Voltage | Qg - Gate Charge | Channel Mode | Tradename | |
|---|---|---|---|---|---|---|---|---|---|---|---|---|---|---|---|---|---|---|---|---|---|---|---|---|
|
|
10,844
In-stock
|
Fairchild Semiconductor | MOSFET SOT-223 N-CH 30V | 20 V | SMD/SMT | SOT-223-4 | - 65 C | + 150 C | Reel | 1 Channel | Si | N-Channel | 30 V | 5 A | 60 mOhms | Enhancement | |||||||
|
|
3,607
In-stock
|
Fairchild Semiconductor | MOSFET 2.5V SINGLE NCH SPECIFIED POWER | 12 V | SMD/SMT | MicroFET-6 | - 55 C | + 150 C | Reel | 1 Channel | Si | N-Channel | 30 V | 5 A | 40 mOhms | Enhancement | PowerTrench | ||||||
|
|
3,311
In-stock
|
Fairchild Semiconductor | MOSFET SSOT-6 N-CH 30V | 20 V | SMD/SMT | SSOT-6 | - 55 C | + 150 C | Reel | 1 Channel | Si | N-Channel | 30 V | 5 A | 35 mOhms | Enhancement | |||||||
|
|
2,465
In-stock
|
onsemi | MOSFET NFET TSOP6 30V 7A 0.030R | 20 V | SMD/SMT | TSOP-6 | - 55 C | + 150 C | Reel | 1 Channel | Si | N-Channel | 30 V | 5 A | 21.5 mOhms | 1 V | 12 nC | Enhancement | |||||
|
|
2,402
In-stock
|
Nexperia | MOSFET PMPB29XNE/SOT1220/REEL 7" Q1/T | SMD/SMT | DFN2020MD-6 | - 55 C | + 150 C | Reel | 1 Channel | Si | N-Channel | 30 V | 5 A | 28 mOhms | 0.65 V | 12.4 nC | Enhancement | ||||||
|
|
520
In-stock
|
Texas instruments | MOSFET 30V, N-Channel NexFET Power Mosfet | - 8 V, + 10 V | SMD/SMT | WSON-FET-6 | - 55 C | + 150 C | Reel | 1 Channel | Si | N-Channel | 30 V | 5 A | 42 mOhms | 900 mV | 2.1 nC | Enhancement | NexFET | ||||
|
|
1,204
In-stock
|
Texas instruments | MOSFET Automotive 30-V N-Channel NexFET? Power MOSFET 6-WS... | 10 V, 8 V | SMD/SMT | WSON-FET-6 | - 55 C | + 150 C | Reel | AEC-Q100 | 1 Channel | Si | N-Channel | 30 V | 5 A | 24 mOhms | 1.3 V | 2.1 nC | Enhancement | NexFET |
