- Manufacture :
- Id - Continuous Drain Current :
- Rds On - Drain-Source Resistance :
- Vgs th - Gate-Source Threshold Voltage :
- Qg - Gate Charge :
18 products
| IMAGE | PART NO. | PRICE | QUANTITY | STOCK | MANUFACTURE | DESCRIPTION | Vgs - Gate-Source Voltage | Mounting Style | Package / Case | Minimum Operating Temperature | Maximum Operating Temperature | Packaging | Number of Channels | Technology | Transistor Polarity | Vds - Drain-Source Breakdown Voltage | Id - Continuous Drain Current | Rds On - Drain-Source Resistance | Vgs th - Gate-Source Threshold Voltage | Qg - Gate Charge | Channel Mode | Tradename | |
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29,889
In-stock
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Nexperia | MOSFET TAPE13 PWR-MOS | 12 V | SMD/SMT | SOT-323-3 | - 55 C | + 150 C | Reel | 1 Channel | Si | N-Channel | 30 V | 870 mA | 440 mOhms | Enhancement | ||||||
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25,096
In-stock
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Nexperia | MOSFET 30V 350 MA N-CH TRENCH MOSFET | 8 V | SMD/SMT | SOT-323-3 | - 55 C | + 150 C | Reel | 1 Channel | Si | N-Channel | 30 V | 350 mA | 1.4 Ohms | 0.9 V | 0.52 nC | |||||
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13,116
In-stock
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Diodes Incorporated | MOSFET 30V N-Ch Enh Mode 12Vgss 465pF 5.5nC | 12 V | SMD/SMT | SOT-323-3 | - 55 C | + 150 C | Reel | 1 Channel | Si | N-Channel | 30 V | 4 A | 52 mOhms | 1.5 V | 11.7 nC | Enhancement | ||||
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8,300
In-stock
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onsemi | MOSFET LOW-NOISE AMPLIFIER | 20 V | SMD/SMT | SOT-323-3 | - 55 C | + 150 C | Reel | 1 Channel | Si | N-Channel | 30 V | 1.8 A | 180 mOhms | 2 nC | ||||||
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3,068
In-stock
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Diodes Incorporated | MOSFET 30V N-Ch Enh Mode 12Vgss 447pF 4.6nC | 12 V | SMD/SMT | SOT-323-3 | - 55 C | + 150 C | Reel | 1 Channel | Si | N-Channel | 30 V | 2.6 A | 70 mOhms | 1.5 V | 4.6 nC | Enhancement | ||||
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13,120
In-stock
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Nexperia | MOSFET NX3020NAKW/SC-70/REEL 7" Q1/T1 | - 20 V | SMD/SMT | SOT-323-3 | - 55 C | + 150 C | Reel | 1 Channel | Si | N-Channel | 30 V | 180 mA | 2.7 Ohms | 1.2 V | 0.34 nC | |||||
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46,798
In-stock
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Diodes Incorporated | MOSFET 30V N-Ch Enh FET 20Vgss 300mA 1.2A | 20 V | SMD/SMT | SOT-323-3 | - 55 C | + 150 C | Reel | 1 Channel | Si | N-Channel | 30 V | 380 mA | 2.8 Ohms | 800 mV | 900 pC | Enhancement | ||||
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4,288
In-stock
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onsemi | MOSFET NCH 4V Power MOSFET | 12 V | SMD/SMT | SOT-323-3 | - 55 C | + 150 C | Reel | 1 Channel | Si | N-Channel | 30 V | 4 A | 130 mOhms | 400 mV | 4.7 nC | Enhancement | ||||
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5,400
In-stock
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onsemi | MOSFET NCH 1.8V DRIVE SERIE | 12 V | SMD/SMT | SOT-323-3 | + 150 C | Reel | 1 Channel | Si | N-Channel | 30 V | 2 A | 125 mOhms | 1.7 nC | Enhancement | ||||||
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4,585
In-stock
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onsemi | MOSFET NCH 1.8V DRIVE SERIES | SMD/SMT | SOT-323-3 | Reel | Si | N-Channel | 30 V | 2 A | 165 mOhms | |||||||||||
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7,771
In-stock
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onsemi | MOSFET NCH 1.5V DRIVE SERIES | 10 V | SMD/SMT | SOT-323-3 | - 55 C | + 150 C | Reel | 1 Channel | Si | N-Channel | 30 V | 150 mA | 2.9 Ohms | 1.58 nC | ||||||
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6,965
In-stock
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Diodes Incorporated | MOSFET 30V N-Ch Enh Mode 12Vgss 465pF 5.5nC | 12 V | SMD/SMT | SOT-323-3 | - 55 C | + 150 C | Reel | 1 Channel | Si | N-Channel | 30 V | 4 A | 85 mOhms | 1.5 V | 11.7 nC | Enhancement | PowerDI | |||
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5,698
In-stock
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Diodes Incorporated | MOSFET 30V N-Ch Enh FET 20Vgss 300mA 1.2A | 20 V | SMD/SMT | SOT-323-3 | - 55 C | + 150 C | Reel | 1 Channel | Si | N-Channel | 30 V | 380 mA | 2.8 Ohms | 800 mV | 900 pC | Enhancement | ||||
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7,289
In-stock
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Toshiba | MOSFET Small-Signal MOSFET | 20 V | SMD/SMT | SOT-323-3 | - 55 C | + 150 C | Reel | 1 Channel | Si | N-Channel | 30 V | 100 mA | 6 Ohms | 800 mV | Enhancement | |||||
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15,917
In-stock
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onsemi | MOSFET NFET SC70 20V 238MA 1.5OH | SMD/SMT | SOT-323-3 | Reel | Si | N-Channel | 30 V | 270 mA | 1.5 Ohms | |||||||||||
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60,000
In-stock
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Toshiba | MOSFET Small-signal MOSFET ID 0.4A, VDSS 30V | 20 V | SMD/SMT | SOT-323-3 | - 55 C | + 150 C | Reel | 1 Channel | Si | N-Channel | 30 V | 400 mA | 500 mOhms | 1.1 V | Enhancement | |||||
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10,000
In-stock
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Diodes Incorporated | MOSFET 30V N-Ch Enh Mode 12Vgss 447pF 4.6nC | 12 V | SMD/SMT | SOT-323-3 | - 55 C | + 150 C | Reel | 1 Channel | Si | N-Channel | 30 V | 2.6 A | 70 mOhms | 1.5 V | 4.6 nC | Enhancement | PowerDI | |||
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4,880
In-stock
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onsemi | MOSFET NCH 4V DRIVE SERIES | 20 V | SMD/SMT | SOT-323-3 | + 150 C | Reel | 1 Channel | Si | N-Channel | 30 V | 1.8 A | 135 mOhms | 1.2 V | 2 nC | Enhancement |
