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4 products
IMAGE | PART NO. | PRICE | QUANTITY | STOCK | MANUFACTURE | DESCRIPTION | Vgs - Gate-Source Voltage | Mounting Style | Package / Case | Minimum Operating Temperature | Maximum Operating Temperature | Packaging | Number of Channels | Technology | Transistor Polarity | Vds - Drain-Source Breakdown Voltage | Id - Continuous Drain Current | Rds On - Drain-Source Resistance | Qg - Gate Charge | Channel Mode | Tradename | |
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2,976
In-stock
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STMicroelectronics | MOSFET N-Ch 30 Volt 100 Amp | 16 V | Through Hole | TO-262-3 | - 55 C | + 175 C | Tube | 1 Channel | Si | N-Channel | 30 V | 100 A | 3.2 mOhms | Enhancement | ||||||
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250
In-stock
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IR / Infineon | MOSFET AUTO 30V 1 N-CH HEXFET 2.4mOhms | 20 V | Through Hole | TO-262-3 | Tube | 1 Channel | Si | N-Channel | 30 V | 235 A | 2.4 mOhms | 160 nC | ||||||||
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752
In-stock
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Infineon Technologies | MOSFET N-Ch 30V 50A IPAK-3 OptiMOS 3 | 20 V | Through Hole | TO-262-3 | - 55 C | + 175 C | Tube | 1 Channel | Si | N-Channel | 30 V | 50 A | 5 mOhms | Enhancement | OptiMOS | |||||
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13
In-stock
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Infineon Technologies | MOSFET N-Ch 30V 35A IPAK-3 OptiMOS 3 | 20 V | Through Hole | TO-262-3 | - 55 C | + 175 C | Tube | 1 Channel | GaN | N-Channel | 30 V | 35 A | 10.5 mOhms | Enhancement | OptiMOS |