- Vgs - Gate-Source Voltage :
- Id - Continuous Drain Current :
- Rds On - Drain-Source Resistance :
- Vgs th - Gate-Source Threshold Voltage :
- Qg - Gate Charge :
- Applied Filters :
3 products
| IMAGE | PART NO. | PRICE | QUANTITY | STOCK | MANUFACTURE | DESCRIPTION | Vgs - Gate-Source Voltage | Mounting Style | Package / Case | Minimum Operating Temperature | Maximum Operating Temperature | Packaging | Number of Channels | Technology | Transistor Polarity | Vds - Drain-Source Breakdown Voltage | Id - Continuous Drain Current | Rds On - Drain-Source Resistance | Vgs th - Gate-Source Threshold Voltage | Qg - Gate Charge | Channel Mode | |
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3,788
In-stock
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Diodes Incorporated | MOSFET P-Ch Enh Mode FET 40V 25mOhm -7.6A | +/- 20 V, +/- 20 V | SMD/SMT | SO-8 | - 55 C | + 150 C | Reel | 2 Channel | Si | P-Channel | - 40 V, - 40 V | - 7.6 A, - 7.6 A | 18 mOhms, 18 mOhms | - 1.8 V, - 1.8 V | 33.7 nC, 33.7 nC | Enhancement | ||
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GET PRICE |
2,995
In-stock
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Diodes Incorporated | MOSFET Dual P-Ch -40V ENH Min RDSon -20VGss | 20 V, 20 V | SMD/SMT | SO-8 | - 55 C | + 150 C | Reel | 2 Channel | Si | P-Channel | - 40 V, - 40 V | - 6.5 A, - 6.5 A | 45 mOhms, 45 mOhms | - 1 V, - 1 V | 10.6 nC, 16 nC | Enhancement | ||
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GET PRICE |
2,380
In-stock
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Diodes Incorporated | MOSFET 40V P-Ch Dual FET 20Vgs -4.2A 14.3 | +/- 20 V, +/- 20 V | SMD/SMT | SO-8 | - 55 C | + 150 C | Reel | 2 Channel | Si | P-Channel | - 40 V, - 40 V | - 5.2 A, - 5.2 A | 38 mOhms, 38 mOhms | - 3 V, - 3 V | 13.9 nC, 13.9 nC | Enhancement |
