- Package / Case :
- Id - Continuous Drain Current :
- Rds On - Drain-Source Resistance :
- Vgs th - Gate-Source Threshold Voltage :
- Qg - Gate Charge :
- Applied Filters :
2 products
| IMAGE | PART NO. | PRICE | QUANTITY | STOCK | MANUFACTURE | DESCRIPTION | Vgs - Gate-Source Voltage | Mounting Style | Package / Case | Minimum Operating Temperature | Maximum Operating Temperature | Packaging | Number of Channels | Technology | Transistor Polarity | Vds - Drain-Source Breakdown Voltage | Id - Continuous Drain Current | Rds On - Drain-Source Resistance | Vgs th - Gate-Source Threshold Voltage | Qg - Gate Charge | Channel Mode | |
|---|---|---|---|---|---|---|---|---|---|---|---|---|---|---|---|---|---|---|---|---|---|---|
|
|
GET PRICE |
2,465
In-stock
|
Diodes Incorporated | MOSFET MOSFET BVDSS: 8V-24V | +/- 8 V, +/- 8 V | SMD/SMT | PowerDI5060-C-8 | - 55 C | + 150 C | Reel | 2 Channel | Si | N-Channel, P-Channel | 12 V, - 20 V | 9.5 A, 8.7 A | 9 mOhms, 14 mOhms | 600 mV, - 1 V | 32 nC, 56 nC | Enhancement | ||
|
|
GET PRICE |
5,070
In-stock
|
Diodes Incorporated | MOSFET N-Ch 12VDss 8Vgss P-Ch 8Vdss 8Vgss | +/- 8 V, +/- 8 V | SMD/SMT | U-DFN2020-B-6 | - 55 C | + 150 C | Reel | 2 Channel | Si | N-Channel, P-Channel | 12 V, - 20 V | 6 A, - 3.4 A | 17 mOhms, 55 mOhms | 400 mV, - 1 V | 18.5 nC, 11.5 nC | Enhancement |
