- Package / Case :
- Rds On - Drain-Source Resistance :
5 products
| IMAGE | PART NO. | PRICE | QUANTITY | STOCK | MANUFACTURE | DESCRIPTION | Vgs - Gate-Source Voltage | Mounting Style | Package / Case | Minimum Operating Temperature | Maximum Operating Temperature | Packaging | Number of Channels | Technology | Transistor Polarity | Vds - Drain-Source Breakdown Voltage | Id - Continuous Drain Current | Rds On - Drain-Source Resistance | Vgs th - Gate-Source Threshold Voltage | Qg - Gate Charge | Channel Mode | Tradename | |
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1,286
In-stock
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STMicroelectronics | MOSFET N-Ch 600V 0.168 Ohm 18A Mdmesh M2 | Through Hole | TO-220-3 | - 55 C | + 150 C | Tube | 1 Channel | Si | N-Channel | 600 V | 18 A | 168 mOhms | 3 V | 29 nC | ||||||
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1,498
In-stock
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STMicroelectronics | MOSFET N-Ch 600 V 0.168 Ohm 18 A MDmesh M2 | 25 V | Through Hole | TO-281-3 | - 55 C | + 150 C | Tube | 1 Channel | Si | N-Channel | 600 V | 18 A | 168 mOhms | 3 V | 29 nC | Enhancement | MDmesh | |||
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213
In-stock
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STMicroelectronics | MOSFET N-channel 600 V, 0.168 Ohm typ., 18 A MDmesh M2 Power MOS... | 25 V | Through Hole | TO-220FP-3 | - 55 C | + 150 C | 1 Channel | Si | N-Channel | 600 V | 18 A | 190 mOhms | 3 V | 29 nC | Enhancement | |||||
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600
In-stock
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STMicroelectronics | MOSFET POWER MOSFET | 25 V | Through Hole | TO-3PF-3 | - 55 C | + 150 C | Tube | 1 Channel | Si | N-Channel | 600 V | 18 A | 190 mOhms | 3 V | 29 nC | Enhancement | ||||
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852
In-stock
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STMicroelectronics | MOSFET POWER MOSFET | 25 V | Through Hole | TO-220-3 | - 55 C | + 150 C | 1 Channel | Si | N-Channel | 600 V | 18 A | 175 mOhms | 3 V | 29 nC | Enhancement |
