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Id - Continuous Drain Current :
Rds On - Drain-Source Resistance :
6 products
IMAGE PART NO. PRICE QUANTITY STOCK MANUFACTURE DESCRIPTION Vgs - Gate-Source Voltage Mounting Style Package / Case Minimum Operating Temperature Maximum Operating Temperature Packaging Number of Channels Technology Transistor Polarity Vds - Drain-Source Breakdown Voltage Id - Continuous Drain Current Rds On - Drain-Source Resistance Vgs th - Gate-Source Threshold Voltage Qg - Gate Charge Channel Mode Tradename
STW10NK60Z
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517
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STMicroelectronics MOSFET N-Ch 600 Volt 10 Amp Zener SuperMESH 30 V Through Hole TO-247-3 - 55 C + 150 C Tube 1 Channel Si N-Channel 600 V 10 A 750 mOhms   50 nC Enhancement  
IXFH28N60P3
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30
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IXYS MOSFET 600V 28A 0.26Ohm PolarP3 Power MOSFET 30 V Through Hole TO-247-3     Tube 1 Channel Si N-Channel 600 V 28 A 260 mOhms 5 V 50 nC   HyperFET
IXFQ28N60P3
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RFQ
43
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IXYS MOSFET 600V 28A 0.26Ohm PolarP3 Power MOSFET 30 V Through Hole TO-3P-3     Tube 1 Channel Si N-Channel 600 V 28 A 260 mOhms 5 V 50 nC   HyperFET
STP10NK60Z
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STMicroelectronics MOSFET N-Ch 600 Volt 10 Amp Zener SuperMESH 30 V Through Hole TO-220-3 - 55 C + 150 C Tube 1 Channel Si N-Channel 600 V 10 A 750 mOhms   50 nC Enhancement  
STB10NK60Z-1
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STMicroelectronics MOSFET N-Ch 600 Volt 10 Amp Zener SuperMESH 30 V Through Hole TO-262-3 - 55 C + 150 C Tube 1 Channel Si N-Channel 600 V 10 A 750 mOhms   50 nC Enhancement  
STFI10NK60Z
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STMicroelectronics MOSFET N-Ch 600V 0.65 Ohm 10A SuperMESH 30 V Through Hole TO-281-3 - 55 C + 150 C Tube 1 Channel Si N-Channel 600 V 10 A 750 mOhms   50 nC    
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