- Rds On - Drain-Source Resistance :
- Vgs th - Gate-Source Threshold Voltage :
- Qg - Gate Charge :
4 products
| IMAGE | PART NO. | PRICE | QUANTITY | STOCK | MANUFACTURE | DESCRIPTION | Vgs - Gate-Source Voltage | Mounting Style | Package / Case | Minimum Operating Temperature | Maximum Operating Temperature | Packaging | Number of Channels | Technology | Transistor Polarity | Vds - Drain-Source Breakdown Voltage | Id - Continuous Drain Current | Rds On - Drain-Source Resistance | Vgs th - Gate-Source Threshold Voltage | Qg - Gate Charge | Channel Mode | Tradename | |
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5,402
In-stock
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Fairchild Semiconductor | MOSFET 150V 14a 0.120 Ohm | 20 V | SMD/SMT | TO-252-3 | - 55 C | + 175 C | Reel | 1 Channel | Si | N-Channel | 150 V | 14 A | 120 mOhms | Enhancement | PowerTrench | ||||
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2,879
In-stock
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Fairchild Semiconductor | MOSFET 14A 150V MOSFET | 20 V | SMD/SMT | TO-252-3 | - 55 C | + 175 C | Reel | 1 Channel | Si | N-Channel | 150 V | 14 A | 90.5 mOhms | 3 V | 11.3 nC | ||||
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219
In-stock
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IR / Infineon | MOSFET 150V 1 N-CH HEXFET 180mOhms 19nC | 30 V | SMD/SMT | TO-252-3 | - 55 C | + 175 C | Tube | 1 Channel | Si | N-Channel | 150 V | 14 A | 180 mOhms | 3 V to 5.5 V | 19 nC | Enhancement | |||
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VIEW | Infineon Technologies | MOSFET MOSFT 150V 14A 180mOhm 19nC | 30 V | SMD/SMT | TO-252-3 | Reel | 1 Channel | Si | N-Channel | 150 V | 14 A | 180 mOhms | 19 nC |
