- Manufacture :
4 products
| IMAGE | PART NO. | PRICE | QUANTITY | STOCK | MANUFACTURE | DESCRIPTION | Vgs - Gate-Source Voltage | Mounting Style | Package / Case | Minimum Operating Temperature | Maximum Operating Temperature | Packaging | Number of Channels | Technology | Transistor Polarity | Vds - Drain-Source Breakdown Voltage | Id - Continuous Drain Current | Rds On - Drain-Source Resistance | Vgs th - Gate-Source Threshold Voltage | Qg - Gate Charge | Channel Mode | |
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2,641
In-stock
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IR / Infineon | MOSFET 150V 1 N-CH HEXFET 125mOhms 28nC | 30 V | SMD/SMT | TO-252-3 | - 55 C | + 175 C | Tube | 1 Channel | Si | N-Channel | 150 V | 18 A | 125 mOhms | 5.5 V | 28 nC | Enhancement | ||
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142
In-stock
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IR / Infineon | MOSFET MOSFT 150V 18A 125mOhm 28nC | 30 V | SMD/SMT | TO-252-3 | Reel | 1 Channel | Si | N-Channel | 150 V | 18 A | 125 mOhms | 28 nC | ||||||
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VIEW | Infineon Technologies | MOSFET 150V 1 N-CH HEXFET 125mOhms 28nC | 30 V | SMD/SMT | TO-252-3 | - 55 C | + 175 C | Reel | 1 Channel | Si | N-Channel | 150 V | 18 A | 125 mOhms | 28 nC | Enhancement | ||||
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VIEW | IR / Infineon | MOSFET PLANAR_MOSFETS | 30 V | SMD/SMT | TO-252-3 | - 55 C | + 175 C | Reel | 1 Channel | Si | N-Channel | 150 V | 18 A | 125 mOhms | 28 nC | Enhancement |
