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Vgs - Gate-Source Voltage :
Package / Case :
Maximum Operating Temperature :
Packaging :
Rds On - Drain-Source Resistance :
Vgs th - Gate-Source Threshold Voltage :
6 products
IMAGE PART NO. PRICE QUANTITY STOCK MANUFACTURE DESCRIPTION Vgs - Gate-Source Voltage Mounting Style Package / Case Minimum Operating Temperature Maximum Operating Temperature Packaging Number of Channels Technology Transistor Polarity Vds - Drain-Source Breakdown Voltage Id - Continuous Drain Current Rds On - Drain-Source Resistance Vgs th - Gate-Source Threshold Voltage Qg - Gate Charge Channel Mode
IRFL4310TRPBF
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RFQ
13,131
In-stock
IR / Infineon MOSFET MOSFT 100V 1.6A 200mOhm 17nC 20 V SMD/SMT SOT-223-4     Reel 1 Channel Si N-Channel 100 V 1.6 A 200 mOhms   17 nC  
SQ2398ES-T1_GE3
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RFQ
11,930
In-stock
Siliconix / Vishay MOSFET N Ch 100Vds 20Vgs AEC-Q101 Qualified +/- 20 V SMD/SMT SOT-23-3 - 55 C + 175 C Reel 1 Channel Si N-Channel 100 V 1.6 A 0.24 Ohms 2.5 V 3.4 nC Enhancement
IRLML0100TRPBF
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RFQ
99,510
In-stock
Infineon Technologies MOSFET MOSFT 100V 1.6A 220mOhm 2.5nC Qg 16 V SMD/SMT SOT-23-3     Reel   Si N-Channel 100 V 1.6 A 235 mOhms   2.5 nC  
DMN10H220L-13
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RFQ
9,853
In-stock
Diodes Incorporated MOSFET 100V N-Ch Enh FET 16Vgs 1.6A 1.3W 16 V SMD/SMT SOT-23-3 - 55 C + 150 C Reel 1 Channel Si N-Channel 100 V 1.6 A 220 mOhms 1 V 8.3 nC Enhancement
DMN10H220L-7
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RFQ
1,243
In-stock
Diodes Incorporated MOSFET 100V N-Ch Enh FET 16Vgs 1.6A 1.3W 16 V SMD/SMT SOT-23-3 - 55 C + 150 C Reel 1 Channel Si N-Channel 100 V 1.6 A 220 mOhms 2.5 V 8.3 nC Enhancement
IRFL4310PBF
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RFQ
1,420
In-stock
Infineon Technologies MOSFET 100V 1 N-CH HEXFET PWR MOSFET200mOhms 20 V SMD/SMT SOT-223-4 - 55 C + 150 C Tube 1 Channel Si N-Channel 100 V 1.6 A 200 mOhms 4 V 17 nC Enhancement
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