- Mounting Style :
- Package / Case :
- Qg - Gate Charge :
6 products
| IMAGE | PART NO. | PRICE | QUANTITY | STOCK | MANUFACTURE | DESCRIPTION | Vgs - Gate-Source Voltage | Mounting Style | Package / Case | Minimum Operating Temperature | Maximum Operating Temperature | Packaging | Number of Channels | Technology | Transistor Polarity | Vds - Drain-Source Breakdown Voltage | Id - Continuous Drain Current | Rds On - Drain-Source Resistance | Vgs th - Gate-Source Threshold Voltage | Qg - Gate Charge | Channel Mode | |
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13,131
In-stock
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IR / Infineon | MOSFET MOSFT 100V 1.6A 200mOhm 17nC | 20 V | SMD/SMT | SOT-223-4 | Reel | 1 Channel | Si | N-Channel | 100 V | 1.6 A | 200 mOhms | 17 nC | ||||||
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2,943
In-stock
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Fairchild Semiconductor | MOSFET TO-220AB N-Ch Power | 10 V | Through Hole | TO-220-3 | - 55 C | + 150 C | Tube | 1 Channel | Si | N-Channel | 100 V | 12 A | 200 mOhms | Enhancement | ||||
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19,920
In-stock
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Infineon Technologies | MOSFET MOSFT 100V 9.7A 200mOhm 16.7nC | 20 V | Through Hole | TO-220-3 | Tube | 1 Channel | Si | N-Channel | 100 V | 9.7 A | 200 mOhms | 16.7 nC | ||||||
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1,958
In-stock
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Infineon Technologies | MOSFET MOSFT 100V 9.5A 200mOhm 16.7nC | 20 V | SMD/SMT | TO-252-3 | Reel | 1 Channel | Si | N-Channel | 100 V | 9.5 A | 200 mOhms | 16.7 nC | ||||||
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1,420
In-stock
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Infineon Technologies | MOSFET 100V 1 N-CH HEXFET PWR MOSFET200mOhms | 20 V | SMD/SMT | SOT-223-4 | - 55 C | + 150 C | Tube | 1 Channel | Si | N-Channel | 100 V | 1.6 A | 200 mOhms | 4 V | 17 nC | Enhancement | ||
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GET PRICE |
8,000
In-stock
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Fairchild Semiconductor | MOSFET 100V Single | 20 V | SMD/SMT | SOT-223-4 | - 55 C | + 150 C | Reel | 1 Channel | Si | N-Channel | 100 V | 2.3 A | 200 mOhms |
