- Rds On - Drain-Source Resistance :
- Qg - Gate Charge :
- Tradename :
7 products
IMAGE | PART NO. | PRICE | QUANTITY | STOCK | MANUFACTURE | DESCRIPTION | Vgs - Gate-Source Voltage | Mounting Style | Package / Case | Minimum Operating Temperature | Maximum Operating Temperature | Packaging | Number of Channels | Technology | Transistor Polarity | Vds - Drain-Source Breakdown Voltage | Id - Continuous Drain Current | Rds On - Drain-Source Resistance | Vgs th - Gate-Source Threshold Voltage | Qg - Gate Charge | Channel Mode | Tradename | |
---|---|---|---|---|---|---|---|---|---|---|---|---|---|---|---|---|---|---|---|---|---|---|---|
|
918
In-stock
|
Fairchild Semiconductor | MOSFET 75a 100V N-Ch UltraFET | 20 V | Through Hole | TO-220-3 | - 55 C | + 175 C | Tube | 1 Channel | Si | N-Channel | 100 V | 75 A | 14 mOhms | Enhancement | UltraFET | ||||||
|
786
In-stock
|
Fairchild Semiconductor | MOSFET 100V 75A N-Chan PowerTrench | 20 V | Through Hole | TO-220-3 | - 55 C | + 175 C | Tube | 1 Channel | Si | N-Channel | 100 V | 75 A | 9 mOhms | Enhancement | PowerTrench | ||||||
|
151
In-stock
|
Fairchild Semiconductor | MOSFET 100V N-Channel PowerTrench | 20 V | Through Hole | TO-220-3 | - 55 C | + 175 C | Tube | 1 Channel | Si | N-Channel | 100 V | 75 A | 10 mOhms | Enhancement | PowerTrench | ||||||
|
36,200
In-stock
|
Infineon Technologies | MOSFET MOSFT 100V 75A 14mOhm 110nC | 20 V | Through Hole | TO-220-3 | Tube | 1 Channel | Si | N-Channel | 100 V | 75 A | 11 mOhms | 110 nC | |||||||||
|
357
In-stock
|
Infineon Technologies | MOSFET AUTO 100V 1 N-CH HEXFET 10mOhms | 20 V | Through Hole | TO-220-3 | - 55 C | Tube | 1 Channel | Si | N-Channel | 100 V | 75 A | 8 mOhms | 120 nC | Enhancement | |||||||
|
54
In-stock
|
IXYS | MOSFET 75 Amps 100V 0.025 Rds | 20 V | Through Hole | TO-220-3 | - 55 C | + 175 C | Tube | 1 Channel | Si | N-Channel | 100 V | 75 A | 21 mOhms | 5.5 V | 74 nC | Enhancement | PolarHT | ||||
|
435
In-stock
|
Toshiba | MOSFET N-Ch PWR FET 75A 103W 100V VDSS | 10 V | Through Hole | TO-220-3 | Reel | 1 Channel | Si | N-Channel | 100 V | 75 A | 9.5 mOhms |