- Manufacture :
- Vgs - Gate-Source Voltage :
- Rds On - Drain-Source Resistance :
- Tradename :
6 products
| IMAGE | PART NO. | PRICE | QUANTITY | STOCK | MANUFACTURE | DESCRIPTION | Vgs - Gate-Source Voltage | Mounting Style | Package / Case | Minimum Operating Temperature | Maximum Operating Temperature | Packaging | Number of Channels | Technology | Transistor Polarity | Vds - Drain-Source Breakdown Voltage | Id - Continuous Drain Current | Rds On - Drain-Source Resistance | Vgs th - Gate-Source Threshold Voltage | Qg - Gate Charge | Channel Mode | Tradename | |
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1,553
In-stock
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Fairchild Semiconductor | MOSFET PWM PFC COMBO | 20 V | SMD/SMT | TO-263-3 | - 55 C | + 175 C | Reel | 1 Channel | Si | N-Channel | 100 V | 75 A | 3.5 mOhms | PowerTrench | ||||||
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540
In-stock
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Fairchild Semiconductor | MOSFET 100V 75A 0.015ohm N-CH | 16 V | SMD/SMT | TO-263-3 | - 55 C | + 175 C | Reel | 1 Channel | Si | N-Channel | 100 V | 75 A | 14 mOhms | Enhancement | ||||||
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551
In-stock
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Fairchild Semiconductor | MOSFET 75a 100V N-Ch UltraFET | 20 V | SMD/SMT | TO-263-3 | - 55 C | + 175 C | Reel | 1 Channel | Si | N-Channel | 100 V | 75 A | 14 mOhms | Enhancement | UltraFET | |||||
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795
In-stock
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Siliconix / Vishay | MOSFET N Ch 100Vds 20Vgs AEC-Q101 Qualified | +/- 20 V | SMD/SMT | TO-263-3 | - 55 C | + 175 C | Tube | 1 Channel | Si | N-Channel | 100 V | 75 A | 4.6 mOhms | 1.5 V | 100 nC | Enhancement | ||||
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432
In-stock
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Fairchild Semiconductor | MOSFET 75a 100V N-Ch UltraFET | 20 V | SMD/SMT | TO-263-3 | - 55 C | + 175 C | Reel | 1 Channel | Si | N-Channel | 100 V | 75 A | 14 mOhms | Enhancement | ||||||
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538
In-stock
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IXYS | MOSFET 75 Amps 100V 0.025 Rds | 20 V | SMD/SMT | TO-263-3 | - 55 C | + 175 C | Tube | 1 Channel | Si | N-Channel | 100 V | 75 A | 25 mOhms | Enhancement |
