- Manufacture :
- Package / Case :
- Maximum Operating Temperature :
- Rds On - Drain-Source Resistance :
- Qg - Gate Charge :
6 products
| IMAGE | PART NO. | PRICE | QUANTITY | STOCK | MANUFACTURE | DESCRIPTION | Vgs - Gate-Source Voltage | Mounting Style | Package / Case | Minimum Operating Temperature | Maximum Operating Temperature | Packaging | Number of Channels | Technology | Transistor Polarity | Vds - Drain-Source Breakdown Voltage | Id - Continuous Drain Current | Rds On - Drain-Source Resistance | Vgs th - Gate-Source Threshold Voltage | Qg - Gate Charge | Channel Mode | Tradename | |
|---|---|---|---|---|---|---|---|---|---|---|---|---|---|---|---|---|---|---|---|---|---|---|---|
|
|
3,880
In-stock
|
IR / Infineon | MOSFET MOSFT 100V 15A 115mOhm 29.3nC | 20 V | SMD/SMT | TO-252-3 | Reel | 1 Channel | Si | N-Channel | 100 V | 15 A | 115 mOhms | 29.3 nC | ||||||||
|
|
2,849
In-stock
|
Infineon Technologies | MOSFET 100V 1 N-CH HEXFET 105mOhms 22.7nC | 16 V | SMD/SMT | TO-252-3 | - 55 C | + 175 C | Reel | 1 Channel | Si | N-Channel | 100 V | 15 A | 155 mOhms | 22.7 nC | Enhancement | |||||
|
|
504
In-stock
|
Infineon Technologies | MOSFET MOSFT 100V 15A 105mOhm 22.7nC LogLv | 16 V | SMD/SMT | TO-252-3 | Reel | 1 Channel | Si | N-Channel | 100 V | 15 A | 155 mOhms | 22.7 nC | ||||||||
|
|
740
In-stock
|
Texas instruments | MOSFET 100V N-Channel NexFET Power MOSFET 8-VSONP -55 t... | 20 V | SMD/SMT | VSONP-8 | - 55 C | + 150 C | Reel | 1 Channel | Si | N-Channel | 100 V | 15 A | 58 mOhms | 3.2 V | 4.3 nC | Enhancement | NexFET | |||
|
|
GET PRICE |
8,000
In-stock
|
IR / Infineon | MOSFET 100V 1 N-CH HEXFET 105mOhms 22.7nC | 16 V | SMD/SMT | TO-252-3 | - 55 C | + 175 C | Reel | 1 Channel | Si | N-Channel | 100 V | 15 A | 155 mOhms | 22.7 nC | Enhancement | ||||
|
|
2,000
In-stock
|
Infineon Technologies | MOSFET 100V 1 N-CH HEXFET 115mOhms 29.3nC | 20 V | SMD/SMT | TO-252-3 | - 55 C | + 175 C | Reel | 1 Channel | Si | N-Channel | 100 V | 15 A | 115 mOhms | 29.3 nC | Enhancement |
