- Mounting Style :
- Package / Case :
- Maximum Operating Temperature :
- Qg - Gate Charge :
- Tradename :
13 products
IMAGE | PART NO. | PRICE | QUANTITY | STOCK | MANUFACTURE | DESCRIPTION | Vgs - Gate-Source Voltage | Mounting Style | Package / Case | Minimum Operating Temperature | Maximum Operating Temperature | Packaging | Number of Channels | Technology | Transistor Polarity | Vds - Drain-Source Breakdown Voltage | Id - Continuous Drain Current | Rds On - Drain-Source Resistance | Vgs th - Gate-Source Threshold Voltage | Qg - Gate Charge | Channel Mode | Tradename | |
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2,335
In-stock
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Fairchild Semiconductor | MOSFET 100V N-Channel PowerTrench MOSFET | SMD/SMT | SO-8 | + 150 C | Reel | 1 Channel | Si | N-Channel | 100 V | 11.2 A | 16 mOhms | PowerTrench | |||||||||
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1,319
In-stock
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Infineon Technologies | MOSFET 100V HEXFET 14mOhms 15nC | 16 V | SMD/SMT | TO-252-3 | - 55 C | + 175 C | Tube | 1 Channel | Si | N-Channel | 100 V | 63 A | 16 mOhms | 2.5 V | 34 nC | Enhancement | |||||
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696
In-stock
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Fairchild Semiconductor | MOSFET N-Ch PowerTrench Trench Mos. | 20 V | SMD/SMT | TO-263-3 | - 55 C | + 175 C | Reel | 1 Channel | Si | N-Channel | 100 V | 61 A | 16 mOhms | Enhancement | PowerTrench | ||||||
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2,484
In-stock
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Diodes Incorporated | MOSFET 100V N-Ch Enh FET 20Vgss 33.3nC 2.0W | 10 V | SMD/SMT | SO-8 | - 55 C | + 150 C | Reel | 1 Channel | Si | N-Channel | 100 V | 8.3 A | 16 mOhms | 2 V | 33.3 nC | Enhancement | |||||
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287
In-stock
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Infineon Technologies | MOSFET MOSFT 100V 63A 14mOhm 34nC Log Lvl | 16 V | Through Hole | TO-251-3 | Tube | 1 Channel | Si | N-Channel | 100 V | 63 A | 16 mOhms | 34 nC | |||||||||
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638
In-stock
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Infineon Technologies | MOSFET AUTO 100V 1 N-CH HEXFET 14mOhms | 16 V | Through Hole | TO-251-3 | Tube | 1 Channel | Si | N-Channel | 100 V | 63 A | 16 mOhms | 34 nC | |||||||||
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319
In-stock
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Infineon Technologies | MOSFET N-Ch 100V 70A D2PAK-2 SIPMOS | 20 V | SMD/SMT | TO-263-3 | - 55 C | + 175 C | Reel | 1 Channel | Si | N-Channel | 100 V | 70 A | 16 mOhms | Enhancement | SIPMOS | ||||||
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5,000
In-stock
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Infineon Technologies | MOSFET N-Ch 100V 53A TO220-3 | Through Hole | TO-220-3 | Tube | 1 Channel | Si | N-Channel | 100 V | 53 A | 16 mOhms | OptiMOS | ||||||||||
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VIEW | Infineon Technologies | MOSFET AUTO 100V 1 N-CH HEXFET 14mOhms | 16 V | SMD/SMT | TO-252-3 | Reel | 1 Channel | Si | N-Channel | 100 V | 63 A | 16 mOhms | 34 nC | |||||||||
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VIEW | Diodes Incorporated | MOSFET 100V N-Ch Enh FET 20Vgss 33.3nC 2.0W | 10 V | SMD/SMT | POWERDI5060-8 | - 55 C | + 150 C | Reel | 1 Channel | Si | N-Channel | 100 V | 44 A | 16 mOhms | 2 V | 33.3 nC | Enhancement | PowerDI | ||||
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VIEW | Infineon Technologies | MOSFET AUTO 100V 1 N-CH HEXFET 14mOhms | 16 V | SMD/SMT | TO-252-3 | Tube | 1 Channel | Si | N-Channel | 100 V | 63 A | 16 mOhms | 34 nC | |||||||||
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VIEW | Infineon Technologies | MOSFET N-Ch 100V 70A TO220-3 SIPMOS | 20 V | Through Hole | TO-220-3 | - 55 C | + 175 C | Tube | 1 Channel | Si | N-Channel | 100 V | 70 A | 16 mOhms | Enhancement | SIPMOS | ||||||
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VIEW | IR / Infineon | MOSFET AUTO 100V 1 N-CH HEXFET 14mOhms | 16 V | SMD/SMT | TO-252-3 | Reel | 1 Channel | Si | N-Channel | 100 V | 63 A | 16 mOhms | 34 nC |