- Manufacture :
- Mounting Style :
- Package / Case :
- Maximum Operating Temperature :
- Tradename :
6 products
| IMAGE | PART NO. | PRICE | QUANTITY | STOCK | MANUFACTURE | DESCRIPTION | Vgs - Gate-Source Voltage | Mounting Style | Package / Case | Minimum Operating Temperature | Maximum Operating Temperature | Packaging | Number of Channels | Technology | Transistor Polarity | Vds - Drain-Source Breakdown Voltage | Id - Continuous Drain Current | Rds On - Drain-Source Resistance | Vgs th - Gate-Source Threshold Voltage | Qg - Gate Charge | Channel Mode | Tradename | |
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23,565
In-stock
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Infineon Technologies | MOSFET N-Ch 100V 42A TDSON-8 OptiMOS 3 | 20 V | SMD/SMT | TDSON-8 | - 55 C | + 150 C | Reel | 1 Channel | Si | N-Channel | 100 V | 42 A | 13.9 mOhms | 2 V | 25 nC | Enhancement | OptiMOS | |||
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5,529
In-stock
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Infineon Technologies | MOSFET N-Ch 100V 42A TDSON-8 OptiMOS 3 | 20 V | SMD/SMT | TDSON-8 | - 55 C | + 150 C | Reel | 1 Channel | Si | N-Channel | 100 V | 42 A | 13.9 mOhms | 2 V | 25 nC | Enhancement | OptiMOS | |||
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1,816
In-stock
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Infineon Technologies | MOSFET MOSFET, 100V, 64A, 1 50 nC Qg, TO-262 | 20 V | Through Hole | TO-262-3 | - 55 C | + 175 C | Tube | 1 Channel | Si | N-Channel | 100 V | 61 A | 13.9 mOhms | 4 V | 58 nC | Enhancement | ||||
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2,216
In-stock
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IR / Infineon | MOSFET 100V 63A 13.9mOhm HEXFET 143W 54nC | 20 V | SMD/SMT | TO-252-3 | Tube | 1 Channel | Si | N-Channel | 100 V | 61 A | 13.9 mOhms | 4 V | 54 nC | Enhancement | StrongIRFET | |||||
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1,355
In-stock
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Infineon Technologies | MOSFET 100V 63A 13.9mOhm HEXFET 143W 54nC | 20 V | SMD/SMT | TO-252-3 | Reel | 1 Channel | Si | N-Channel | 100 V | 61 A | 13.9 mOhms | 87 nC | StrongIRFET | |||||||
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6,000
In-stock
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Infineon Technologies | MOSFET 100V 63A 13.9mOhm HEXFET 143W 54nC | SMD/SMT | TO-252-3 | Reel | 1 Channel | Si | N-Channel | 100 V | 63 A | 13.9 mOhms | 3 V | 54 nC | Enhancement | StrongIRFET |
