- Manufacture :
- Mounting Style :
- Package / Case :
- Qg - Gate Charge :
3 products
| IMAGE | PART NO. | PRICE | QUANTITY | STOCK | MANUFACTURE | DESCRIPTION | Vgs - Gate-Source Voltage | Mounting Style | Package / Case | Minimum Operating Temperature | Maximum Operating Temperature | Packaging | Number of Channels | Technology | Transistor Polarity | Vds - Drain-Source Breakdown Voltage | Id - Continuous Drain Current | Rds On - Drain-Source Resistance | Vgs th - Gate-Source Threshold Voltage | Qg - Gate Charge | Channel Mode | |
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2,875
In-stock
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Infineon Technologies | MOSFET MOSFT 100V 17A 90mOhm 24.7nC | 20 V | Through Hole | TO-220-3 | Tube | 1 Channel | Si | N-Channel | 100 V | 17 A | 90 mOhms | 24.7 nC | |||||||
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20,950
In-stock
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Infineon Technologies | MOSFET MOSFT 100V 17A 90mOhm 24.7nC | 20 V | SMD/SMT | TO-252-3 | - 55 C | + 175 C | Reel | 1 Channel | Si | N-Channel | 100 V | 17 A | 90 mOhms | 4 V | 37 nC | ||||
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506
In-stock
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IR / Infineon | MOSFET 100V 1 N-CH HEXFET 90mOhms 24.7nC | 20 V | SMD/SMT | TO-252-3 | - 55 C | + 175 C | Reel | 1 Channel | Si | N-Channel | 100 V | 17 A | 90 mOhms | 24.7 nC | Enhancement |
