- Manufacture :
- Mounting Style :
- Package / Case :
- Maximum Operating Temperature :
- Vgs th - Gate-Source Threshold Voltage :
- Qg - Gate Charge :
- Tradename :
5 products
| IMAGE | PART NO. | PRICE | QUANTITY | STOCK | MANUFACTURE | DESCRIPTION | Vgs - Gate-Source Voltage | Mounting Style | Package / Case | Minimum Operating Temperature | Maximum Operating Temperature | Packaging | Number of Channels | Technology | Transistor Polarity | Vds - Drain-Source Breakdown Voltage | Id - Continuous Drain Current | Rds On - Drain-Source Resistance | Vgs th - Gate-Source Threshold Voltage | Qg - Gate Charge | Channel Mode | Tradename | |
|---|---|---|---|---|---|---|---|---|---|---|---|---|---|---|---|---|---|---|---|---|---|---|---|
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590
In-stock
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IXYS | MOSFET LinearL2 Powr MOSFET w/extended FBSOA | 20 V | Through Hole | TO-247-3 | - 55 C | + 150 C | Tube | 1 Channel | Si | N-Channel | 100 V | 75 A | 21 mOhms | |||||||
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104
In-stock
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Fairchild Semiconductor | MOSFET 100V N-Chan Pwr Clip PowerTrench MOSFET | SMD/SMT | Power-33-8 | - 55 C | + 150 C | Reel | 1 Channel | Si | N-Channel | 100 V | 43 A | 21 mOhms | 2.9 V | 15 nC | PowerTrench Power Clip | |||||
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85
In-stock
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IXYS | MOSFET LINEAR L2 SERIES MOSFET 100V 75A | 20 V | SMD/SMT | TO-268-3 | - 55 C | + 150 C | Tube | 1 Channel | Si | N-Channel | 100 V | 75 A | 21 mOhms | 2.5 V to 4.5 V | 215 nC | Enhancement | ||||
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54
In-stock
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IXYS | MOSFET 75 Amps 100V 0.025 Rds | 20 V | Through Hole | TO-220-3 | - 55 C | + 175 C | Tube | 1 Channel | Si | N-Channel | 100 V | 75 A | 21 mOhms | 5.5 V | 74 nC | Enhancement | PolarHT | |||
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35
In-stock
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IXYS | MOSFET 75 Amps 100V 0.025 Rds | 20 V | Through Hole | TO-3P-3 | - 55 C | + 175 C | Tube | 1 Channel | Si | N-Channel | 100 V | 75 A | 21 mOhms | 5.5 V | 74 nC | Enhancement | PolarHT |
