- Package / Case :
- Maximum Operating Temperature :
- Rds On - Drain-Source Resistance :
5 products
IMAGE | PART NO. | PRICE | QUANTITY | STOCK | MANUFACTURE | DESCRIPTION | Vgs - Gate-Source Voltage | Mounting Style | Package / Case | Minimum Operating Temperature | Maximum Operating Temperature | Packaging | Number of Channels | Technology | Transistor Polarity | Vds - Drain-Source Breakdown Voltage | Id - Continuous Drain Current | Rds On - Drain-Source Resistance | Vgs th - Gate-Source Threshold Voltage | Qg - Gate Charge | Channel Mode | Tradename | |
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14
In-stock
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Texas instruments | MOSFET 100V, 4.0 mOhm, SON5x6 N-Channel NexFET Power MO... | 20 V | SMD/SMT | VSON-Clip-8 | - 55 C | + 150 C | Reel | 1 Channel | Si | N-Channel | 100 V | 100 A | 4.9 mOhms | 2.6 V | 48 nC | Enhancement | NexFET | ||||
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13,390
In-stock
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Texas instruments | MOSFET 100V N-Channel NexFET Power MOSFET | 20 V | SMD/SMT | VSON-Clip-8 | - 55 C | + 150 C | Reel | 1 Channel | Si | N-Channel | 100 V | 200 A | 16.6 mOhms | 2.6 V | 16 nC | Enhancement | |||||
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157
In-stock
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Texas instruments | MOSFET 100V, N-channel NexFET Pwr MOSFET | 20 V | SMD/SMT | TO-263-3 | - 55 C | + 175 C | Reel | 1 Channel | Si | N-Channel | 100 V | 200 A | 5.3 mOhms | 2.6 V | 44 nC | NexFET | |||||
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9,950
In-stock
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Texas instruments | MOSFET 100V 4.0 mOhm N-Ch NexFET Power MOSFET | 20 V | SMD/SMT | VSON-Clip-8 | - 55 C | + 150 C | Reel | 1 Channel | Si | N-Channel | 100 V | 200 A | 4.9 mOhms | 2.6 V | 48 nC | Enhancement | NexFET | ||||
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750
In-stock
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Texas instruments | MOSFET 100V N-Channel NexFET" Power MOSFET 8-VSON-CLI... | 20 V | SMD/SMT | VSON-Clip-8 | - 55 C | + 150 C | Reel | 1 Channel | Si | N-Channel | 100 V | 50 A | 16.6 mOhms | 2.6 V | 16 nC | Enhancement |