- Mounting Style :
- Maximum Operating Temperature :
- Rds On - Drain-Source Resistance :
- Tradename :
23 products
| IMAGE | PART NO. | PRICE | QUANTITY | STOCK | MANUFACTURE | DESCRIPTION | Vgs - Gate-Source Voltage | Mounting Style | Package / Case | Minimum Operating Temperature | Maximum Operating Temperature | Packaging | Number of Channels | Technology | Transistor Polarity | Vds - Drain-Source Breakdown Voltage | Id - Continuous Drain Current | Rds On - Drain-Source Resistance | Vgs th - Gate-Source Threshold Voltage | Qg - Gate Charge | Channel Mode | Tradename | |
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3,247
In-stock
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Infineon Technologies | MOSFET 100V 1 N-CH HEXFET 14.9mOhms 39nC | 20 V | SMD/SMT | PQFN-8 | - 55 C | + 150 C | Reel | 1 Channel | Si | N-Channel | 100 V | 10 A | 14.9 mOhms | 2 V to 4 V | 40 nC | Enhancement | ||||
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6,236
In-stock
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IR / Infineon | MOSFET 100V 1 N-CH HEXFET 9mOhms 65nC | 20 V | SMD/SMT | PQFN-8 | - 55 C | + 150 C | Reel | 1 Channel | Si | N-Channel | 100 V | 100 A | 9 mOhms | 2 V to 4 V | 65 nC | Enhancement | ||||
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2,633
In-stock
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Infineon Technologies | MOSFET 100V 97A 9mOhm Automotive MOSFET | 20 V | SMD/SMT | TO-252-3 | - 55 C | + 175 C | Tube | 1 Channel | Si | N-Channel | 100 V | 97 A | 9 mOhms | 2 V to 4 V | 83 nC | Enhancement | ||||
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1,719
In-stock
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Infineon Technologies | MOSFET 100V SINGLE N-CH 39mOhms 37nC | 20 V | SMD/SMT | TO-252-3 | - 55 C | + 175 C | Reel | 1 Channel | Si | N-Channel | 100 V | 31 A | 39 mOhms | 2 V to 4 V | 37 nC | Enhancement | ||||
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30,420
In-stock
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onsemi | MOSFET NFET DPAK 100V 19A 96MO | 20 V | SMD/SMT | TO-252-3 | - 55 C | + 175 C | Reel | 1 Channel | Si | N-Channel | 100 V | 17 A | 81 mOhms | 2 V to 4 V | 20 nC | |||||
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800
In-stock
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onsemi | MOSFET NFET D2PAK 100V 76A 13MOH | 20 V | SMD/SMT | TO-263-3 | - 55 C | + 175 C | Reel | 1 Channel | Si | N-Channel | 100 V | 76 A | 11 mOhms | 2 V to 4 V | 120 nC | |||||
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979
In-stock
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STMicroelectronics | MOSFET N-Ch 100V 0.0068mOhm 80A STripFETVII 150W | 20 V | Through Hole | TO-220-3 | - 55 C | + 175 C | Tube | 1 Channel | Si | N-Channel | 100 V | 80 A | 8 mOhms | 2 V to 4 V | 56 nC | |||||
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975
In-stock
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STMicroelectronics | MOSFET N-CH 100V 0.0068Ohm 80A STripFET VII | 20 V | Through Hole | TO-220-3 | - 55 C | + 175 C | Tube | 1 Channel | Si | N-Channel | 100 V | 45 A | 8 mOhms | 2 V to 4 V | 61 nC | |||||
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579
In-stock
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Infineon Technologies | MOSFET 100V 1 N-CH HEXFET 44mOhms 47.3nC | 20 V | SMD/SMT | TO-263-3 | - 55 C | + 175 C | Reel | 1 Channel | Si | N-Channel | 100 V | 33 A | 44 mOhms | 2 V to 4 V | 47.3 nC | Enhancement | ||||
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285
In-stock
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onsemi | MOSFET NFET TO220 100V 76A 13MOH | 20 V | Through Hole | TO-220-3 | - 55 C | + 175 C | Tube | 1 Channel | Si | N-Channel | 100 V | 76 A | 11 mOhms | 2 V to 4 V | 120 nC | |||||
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5,046
In-stock
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Toshiba | MOSFET N-Ch 60V 42A 48W UMOSVIII 1440pF 22nC | 20 V | SMD/SMT | SOP-Advance-8 | Reel | 1 Channel | Si | N-Channel | 100 V | 42 A | 11.3 mOhms | 2 V to 4 V | 22 nC | Enhancement | ||||||
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19,440
In-stock
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Toshiba | MOSFET U-MOSVIII-H 100V 93A 58nC MOSFET | 20 V | SMD/SMT | SOP-Advance-8 | - 55 C | + 150 C | Reel | 1 Channel | Si | N-Channel | 100 V | 93 A | 3.7 mOhms | 2 V to 4 V | 58 nC | UMOSVIII | ||||
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383
In-stock
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Toshiba | MOSFET N-Ch 120V 59A 61W UMOSVIII 2180pF 33nC | 20 V | SMD/SMT | SOP-Advance-8 | Reel | 1 Channel | Si | N-Channel | 100 V | 59 A | 7.4 mOhms | 2 V to 4 V | 33 nC | Enhancement | ||||||
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288
In-stock
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Toshiba | MOSFET MOSFET NCh12.2ohm 10V 10uA VDS100V | 20 V | Through Hole | TO-220FP-3 | - 55 C | + 150 C | 1 Channel | Si | N-Channel | 100 V | 22 A | 11.5 mOhms | 2 V to 4 V | 28 nC | Enhancement | |||||
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GET PRICE |
5,500
In-stock
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Toshiba | MOSFET MOSFET NCh6.8ohm VGS10V10uAVDS100V | 20 V | Through Hole | TO-220FP-3 | - 55 C | + 150 C | 1 Channel | Si | N-Channel | 100 V | 40 A | 6.8 mOhms | 2 V to 4 V | 49 nC | Enhancement | ||||
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26
In-stock
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Toshiba | MOSFET N-Ch 100V 21A 27W UMOSVIII 680pF 11nC | 20 V | SMD/SMT | TSON-Advance-8 | Reel | 1 Channel | Si | N-Channel | 100 V | 21 A | 28 mOhms | 2 V to 4 V | 11 nC | Enhancement | ||||||
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51
In-stock
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Toshiba | MOSFET MOSFET NCh 3.1ohm VGS10V10uAVDS100V | 20 V | Through Hole | TO-220FP-3 | - 55 C | + 150 C | 1 Channel | Si | N-Channel | 100 V | 100 A | 3.1 mOhms | 2 V to 4 V | 140 nC | Enhancement | |||||
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200
In-stock
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Toshiba | MOSFET MOSFET NCh 8 mOhms VGS10V10uAVDS100V | 20 V | Through Hole | TO-220FP-3 | - 55 C | + 150 C | 1 Channel | Si | N-Channel | 100 V | 34 A | 7.9 mOhms | 2 V to 4 V | 38 nC | Enhancement | |||||
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1,600
In-stock
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Fairchild Semiconductor | MOSFET 100V N-Channel PowerTrench MOSFET | 20 V | SMD/SMT | TO-263-3 | - 55 C | + 175 C | Reel | 1 Channel | Si | N-Channel | 100 V | 80 A | 7.5 mOhms | 2 V to 4 V | 84 nC | PowerTrench | ||||
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1,000
In-stock
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STMicroelectronics | MOSFET N-Ch 100V 6mOhm 110A STripFET VII | 20 V | SMD/SMT | H2PAK-2 | - 55 C | + 175 C | Reel | 1 Channel | Si | N-Channel | 100 V | 110 A | 6.5 mOhms | 2 V to 4 V | 60 nC | |||||
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150
In-stock
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Toshiba | MOSFET MOSFET NCh 4ohm VGS10V10uAVDS100V | 20 V | Through Hole | TO-220FP-3 | - 55 C | + 150 C | 1 Channel | Si | N-Channel | 100 V | 65 A | 4 mOhms | 2 V to 4 V | 81 nC | Enhancement | |||||
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VIEW | IR / Infineon | MOSFET 100V 190A 4 mOhm Automotive MOSFET | 20 V | SMD/SMT | TO-263-7 | - 55 C | + 175 C | Tube | 1 Channel | Si | N-Channel | 100 V | 190 A | 3.3 mOhms | 2 V to 4 V | 150 nC | Enhancement | ||||
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63
In-stock
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IR / Infineon | MOSFET 100V 63A 13.9mOhm HEXFET 143W 54nC | 20 V | SMD/SMT | TO-252-3 | - 55 C | + 175 C | Tube | 1 Channel | Si | N-Channel | 100 V | 63 A | 11.1 mOhms | 2 V to 4 V | 54 nC | Enhancement | StrongIRFET |
