- Vgs - Gate-Source Voltage :
- Mounting Style :
- Maximum Operating Temperature :
- Packaging :
- Rds On - Drain-Source Resistance :
-
- 0.003 Ohms (3)
- 0.0079 Ohms (2)
- 0.021 Ohms (1)
- 0.023 Ohms (1)
- 0.24 Ohms (1)
- 10 mOhms (1)
- 11 mOhms (1)
- 12 mOhms (1)
- 135 mOhms (1)
- 14 mOhms (2)
- 16 mOhms (1)
- 18 mOhms (3)
- 2.3 mOhms (1)
- 2.5 mOhms (3)
- 22 mOhms (1)
- 220 mOhms (1)
- 28 mOhms (1)
- 32 mOhms (2)
- 35 mOhms (1)
- 4.3 mOhms (1)
- 6.5 mOhms (1)
- 6.8 mOhms (1)
- 9.5 mOhms (1)
- 9.9 mOhms (1)
- Tradename :
- Package :
33 products
IMAGE | PART NO. | PRICE | QUANTITY | STOCK | MANUFACTURE | DESCRIPTION | Vgs - Gate-Source Voltage | Mounting Style | Package / Case | Minimum Operating Temperature | Maximum Operating Temperature | Packaging | Qualification | Number of Channels | Pd - Power Dissipation | Technology | Transistor Polarity | Vds - Drain-Source Breakdown Voltage | Id - Continuous Drain Current | Rds On - Drain-Source Resistance | Vgs th - Gate-Source Threshold Voltage | Qg - Gate Charge | Channel Mode | Tradename | Rise Time | Package | Factory Pack Quantity | RoHS | |
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45,200
In-stock
|
ROHM Semiconductor | MOSFET Nch 100V 5A TO-252(DPAK) | - 20 V, + 20 V | Tape & Reel (TR) | 1 Channel | 15 W | N-Channel | 100 V | 5 A | 135 mOhms | 2.5 V | 14 nC | DPAK-3 (TO-252-3) | 2500 | Green available | |||||||||||||
|
GET PRICE |
8,650
In-stock
|
STMicroelectronics | MOSFET Automotive-grade N-channel 100 V, 0.008 Ohm typ 16 A STripF... | - 20 V, + 20 V | Tape & Reel (TR) | AEC-Q101 | 1 Channel | 5 W | N-Channel | 100 V | 16 A | 9.5 mOhms | 2.5 V | 45 nC | 32 ns | PowerFLAT-5x6-8 | 3000 | Green available | ||||||||||
|
2,990
In-stock
|
Vishay Semiconductors | MOSFET 100V 32A 83W AEC-Q101 Qualified | +/- 20 V | SMD/SMT | PowerPAK-SO-8L-4 | - 55 C | + 175 C | Reel | 1 Channel | Si | N-Channel | 100 V | 32 A | 0.021 Ohms | 2.5 V | 63 nC | Enhancement | TrenchFET | ||||||||||
|
7,603
In-stock
|
IR / Infineon | MOSFET 100V HEXFET 14mOhms 15nC | 16 V | SMD/SMT | TO-252-3 | - 55 C | + 175 C | Reel | 1 Channel | Si | N-Channel | 100 V | 63 A | 12 mOhms | 2.5 V | 34 nC | ||||||||||||
|
5,095
In-stock
|
IR / Infineon | MOSFET 100V 1 N-CH HEXFET 9mOhms 44nC | 16 V | SMD/SMT | PQFN-8 | - 55 C | + 150 C | Reel | 1 Channel | Si | N-Channel | 100 V | 88 A | 9.9 mOhms | 2.5 V | 44 nC | ||||||||||||
|
341
In-stock
|
IXYS | MOSFET Linear Extended FBSOA Power MOSFET | SMD/SMT | TO-268-3 | - 55 C | + 150 C | Tube | 1 Channel | Si | N-Channel | 100 V | 110 A | 18 mOhms | 2.5 V | 260 nC | Enhancement | ||||||||||||
|
305
In-stock
|
IXYS | MOSFET L2 Linear Power MOSFET | 20 V | Through Hole | TO-247-3 | - 55 C | + 150 C | Tube | 1 Channel | Si | N-Channel | 100 V | 110 A | 18 mOhms | 2.5 V | 260 nC | Enhancement | |||||||||||
|
3,930
In-stock
|
Infineon Technologies | MOSFET MOSFT 100V 63A 14mOhm 34nC Log Lvl | SMD/SMT | TO-252-3 | + 175 C | Reel | 1 Channel | Si | N-Channel | 100 V | 63 A | 14 mOhms | 2.5 V | 48 nC | ||||||||||||||
|
1,000
In-stock
|
STMicroelectronics | MOSFET POWER MOSFET | 20 V | SMD/SMT | H2PAK-2 | - 55 C | + 175 C | Reel | 1 Channel | Si | N-Channel | 100 V | 180 A | 2.5 mOhms | 2.5 V | 160 nC | Enhancement | |||||||||||
|
11,930
In-stock
|
Siliconix / Vishay | MOSFET N Ch 100Vds 20Vgs AEC-Q101 Qualified | +/- 20 V | SMD/SMT | SOT-23-3 | - 55 C | + 175 C | Reel | 1 Channel | Si | N-Channel | 100 V | 1.6 A | 0.24 Ohms | 2.5 V | 3.4 nC | Enhancement | |||||||||||
|
1,319
In-stock
|
Infineon Technologies | MOSFET 100V HEXFET 14mOhms 15nC | 16 V | SMD/SMT | TO-252-3 | - 55 C | + 175 C | Tube | 1 Channel | Si | N-Channel | 100 V | 63 A | 16 mOhms | 2.5 V | 34 nC | Enhancement | |||||||||||
|
733
In-stock
|
Vishay Semiconductors | MOSFET N-Channel 100V AEC-Q101 Qualified | +/- 20 V | SMD/SMT | TO-263-3 | - 55 C | + 175 C | Reel | 1 Channel | Si | N-Channel | 100 V | 120 A | 0.003 Ohms | 2.5 V | 190 nC | Enhancement | TrenchFET | ||||||||||
|
2,490
In-stock
|
Diodes Incorporated | MOSFET N-Ch Enh Mode FET 100Vds 20Vgs 125W | 10 V | SMD/SMT | TO-252-3 | - 55 C | + 175 C | Reel | 1 Channel | Si | N-Channel | 100 V | 55 A | 28 mOhms | 2.5 V | 36 nC | Enhancement | |||||||||||
|
620
In-stock
|
Vishay Semiconductors | MOSFET 100V 40A 107W AEC-Q101 Qualified | +/- 20 V | SMD/SMT | TO-263-3 | - 55 C | + 175 C | Reel | 1 Channel | Si | N-Channel | 100 V | 40 A | 0.023 Ohms | 2.5 V | 62 nC | Enhancement | TrenchFET | ||||||||||
|
30,000
In-stock
|
Siliconix / Vishay | MOSFET N Ch 100Vds 20Vgs AEC-Q101 Qualified | +/- 20 V | SMD/SMT | PowerPAK-SO-8L-4 | - 55 C | + 175 C | Reel | 1 Channel | Si | N-Channel | 100 V | 27 A | 22 mOhms | 2.5 V | 20 nC | Enhancement | |||||||||||
|
481
In-stock
|
Siliconix / Vishay | MOSFET N-Channel 100V AEC-Q101 Qualified | +/- 20 V | Through Hole | TO-220-3 | - 55 C | + 175 C | 1 Channel | Si | N-Channel | 100 V | 120 A | 0.003 Ohms | 2.5 V | 190 nC | Enhancement | TrenchFET | |||||||||||
|
1,243
In-stock
|
Diodes Incorporated | MOSFET 100V N-Ch Enh FET 16Vgs 1.6A 1.3W | 16 V | SMD/SMT | SOT-23-3 | - 55 C | + 150 C | Reel | 1 Channel | Si | N-Channel | 100 V | 1.6 A | 220 mOhms | 2.5 V | 8.3 nC | Enhancement | |||||||||||
|
GET PRICE |
9,760
In-stock
|
STMicroelectronics | MOSFET Automotive-grade N-channel 100 V, 0.0125 Ohm typ., 45 A STri... | 10 V | SMD/SMT | TO-252-3 | - 55 C | + 175 C | Reel | 1 Channel | Si | N-Channel | 100 V | 22 A | 18 mOhms | 2.5 V | 25 nC | Enhancement | ||||||||||
|
364
In-stock
|
STMicroelectronics | MOSFET Automotive-grade N-channel 100 V, 0.0085 Ohm typ., 70 A STri... | 20 V | SMD/SMT | TO-252-3 | - 55 C | + 175 C | Reel | 1 Channel | Si | N-Channel | 100 V | 70 A | 10 mOhms | 2.5 V | 45 nC | Enhancement | |||||||||||
|
140
In-stock
|
IR / Infineon | MOSFET MOSFT 100V 180A 4.3mOhm 87nC | SMD/SMT | TO-252-3 | + 175 C | Reel | 1 Channel | Si | N-Channel | 100 V | 180 A | 4.3 mOhms | 2.5 V | 130 nC | ||||||||||||||
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29
In-stock
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IXYS | MOSFET | 20 V | SMD/SMT | TO-263-3 | - 55 C | + 150 C | Tube | 1 Channel | Si | N-Channel | 100 V | 64 A | 32 mOhms | 2.5 V | 100 nC | Enhancement | |||||||||||
|
70
In-stock
|
IXYS | MOSFET | 20 V | Through Hole | TO-247-3 | - 55 C | + 150 C | 1 Channel | Si | N-Channel | 100 V | 64 A | 32 mOhms | 2.5 V | 100 nC | Enhancement | LinearL2 | |||||||||||
|
350
In-stock
|
Texas instruments | MOSFET 100V N-CH NexFET Pwr MOSFET | 20 V | Through Hole | TO-220-3 | - 55 C | + 175 C | Tube | 1 Channel | Si | N-Channel | 100 V | 200 A | 2.5 mOhms | 2.5 V | 118 nC | NexFET | |||||||||||
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790
In-stock
|
Siliconix / Vishay | MOSFET N-Channel 100V AEC-Q101 Qualified | +/- 20 V | SMD/SMT | TO-263-3 | - 55 C | + 175 C | Reel | 1 Channel | Si | N-Channel | 100 V | 120 A | 0.0079 Ohms | 2.5 V | 180 nC | Enhancement | TrenchFET | ||||||||||
|
5,000
In-stock
|
STMicroelectronics | MOSFET 100 V Mosfet 35 RDS 25A D2PAK | 16 V | SMD/SMT | TO-252-3 | - 55 C | + 175 C | Reel | 1 Channel | Si | N-Channel | 100 V | 25 A | 35 mOhms | 2.5 V | 38 nC | ||||||||||||
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5,000
In-stock
|
STMicroelectronics | MOSFET POWER MOSFET | 20 V | SMD/SMT | TO-252-3 | - 55 C | + 175 C | Reel | 1 Channel | Si | N-Channel | 100 V | 80 A | 6.8 mOhms | 2.5 V | 61 nC | Enhancement | |||||||||||
|
1,000
In-stock
|
STMicroelectronics | MOSFET N-Ch 100 V 2.1 mOhm 180 A STripFET | 20 V | SMD/SMT | TO-263-7 | - 55 C | + 175 C | Reel | 1 Channel | Si | N-Channel | 100 V | 180 A | 2.3 mOhms | 2.5 V | 180 nC | Enhancement | STripFET | ||||||||||
|
998
In-stock
|
STMicroelectronics | MOSFET POWER MOSFET | 20 V | SMD/SMT | TO-263-7 | - 55 C | + 175 C | Reel | 1 Channel | Si | N-Channel | 100 V | 180 A | 2.5 mOhms | 2.5 V | 160 nC | Enhancement | |||||||||||
|
3,000
In-stock
|
Siliconix / Vishay | MOSFET N Ch 100Vds 20Vgs AEC-Q101 Qualified | +/- 20 V | SMD/SMT | PowerPAK-SO-8L-4 | - 55 C | + 175 C | Reel | 1 Channel | Si | N-Channel | 100 V | 48 A | 11 mOhms | 2.5 V | 35 nC | Enhancement | |||||||||||
|
VIEW | Infineon Technologies | MOSFET 100V HEXFET 14mOhms 15nC | 16 V | SMD/SMT | TO-252-3 | - 55 C | + 175 C | Reel | 1 Channel | Si | N-Channel | 100 V | 63 A | 14 mOhms | 2.5 V | 34 nC | Enhancement |