- Vgs - Gate-Source Voltage :
- Package / Case :
- Packaging :
- Id - Continuous Drain Current :
- Rds On - Drain-Source Resistance :
5 products
| IMAGE | PART NO. | PRICE | QUANTITY | STOCK | MANUFACTURE | DESCRIPTION | Vgs - Gate-Source Voltage | Mounting Style | Package / Case | Minimum Operating Temperature | Maximum Operating Temperature | Packaging | Qualification | Number of Channels | Pd - Power Dissipation | Technology | Transistor Polarity | Vds - Drain-Source Breakdown Voltage | Id - Continuous Drain Current | Rds On - Drain-Source Resistance | Vgs th - Gate-Source Threshold Voltage | Qg - Gate Charge | Channel Mode | Tradename | Package | Factory Pack Quantity | RoHS | |
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46,520
In-stock
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Diodes Incorporated | MOSFET MOSFET BVDSS: 61V-100V | - 20 V, + 20 V | Tape & Reel (TR) | AEC-Q101 | 1 Channel | 100 W | N-Channel | 100 V | 51.7 A | 22 mOhms | 1 V | 21 nC | TO-252-3 | 2500 | Green available | |||||||||
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3,755
In-stock
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Infineon Technologies | MOSFET N-Ch 100V 40A TDSON-8 OptiMOS 2 | 20 V | SMD/SMT | TDSON-8 | - 55 C | + 150 C | Reel | 1 Channel | Si | N-Channel | 100 V | 40 A | 20 mOhms | 1.2 V | 21 nC | Enhancement | OptiMOS | ||||||||
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4,425
In-stock
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Infineon Technologies | MOSFET N-Ch 100V 40A TDSON-8 OptiMOS 2 | 20 V | SMD/SMT | TDSON-8 | - 55 C | + 150 C | Reel | 1 Channel | Si | N-Channel | 100 V | 40 A | 20 mOhms | 1.2 V | 21 nC | Enhancement | OptiMOS | ||||||||
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3,000
In-stock
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Fairchild Semiconductor | MOSFET PTNG 100/20V Nch Power Trench Mosfet | +/- 20 V | SMD/SMT | Power-56-8 | - 55 C | + 150 C | Reel | 1 Channel | Si | N-Channel | 100 V | 51 A | 9.9 mOhms | 2 V | 21 nC | Enhancement | |||||||||
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3,000
In-stock
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Fairchild Semiconductor | MOSFET PTNG 100/20V Nch Trench Mosfet | +/- 20 V | SMD/SMT | Power33-8 | - 55 C | + 150 C | Reel | 1 Channel | N-Channel | 100 V | 47 A | 11 mOhms | 2 V | 21 nC | Enhancement |
