- Manufacture :
- Mounting Style :
- Package / Case :
- Maximum Operating Temperature :
- Rds On - Drain-Source Resistance :
- Vgs th - Gate-Source Threshold Voltage :
6 products
| IMAGE | PART NO. | PRICE | QUANTITY | STOCK | MANUFACTURE | DESCRIPTION | Vgs - Gate-Source Voltage | Mounting Style | Package / Case | Minimum Operating Temperature | Maximum Operating Temperature | Packaging | Number of Channels | Technology | Transistor Polarity | Vds - Drain-Source Breakdown Voltage | Id - Continuous Drain Current | Rds On - Drain-Source Resistance | Vgs th - Gate-Source Threshold Voltage | Qg - Gate Charge | Channel Mode | |
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5,444
In-stock
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IR / Infineon | MOSFET MOSFT 100V 6.9A 26mOhm 61nC | 20 V | SMD/SMT | SO-8 | Reel | 1 Channel | Si | N-Channel | 100 V | 6.9 A | 26 mOhms | 61 nC | |||||||
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975
In-stock
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STMicroelectronics | MOSFET N-CH 100V 0.0068Ohm 80A STripFET VII | 20 V | Through Hole | TO-220-3 | - 55 C | + 175 C | Tube | 1 Channel | Si | N-Channel | 100 V | 45 A | 8 mOhms | 2 V to 4 V | 61 nC | ||||
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5,000
In-stock
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STMicroelectronics | MOSFET POWER MOSFET | 20 V | SMD/SMT | TO-252-3 | - 55 C | + 175 C | Reel | 1 Channel | Si | N-Channel | 100 V | 80 A | 6.8 mOhms | 2.5 V | 61 nC | Enhancement | |||
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964
In-stock
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STMicroelectronics | MOSFET N-Ch 100V 0.0068 Ohm typ. 80A STripFET | 20 V | SMD/SMT | TO-263-3 | - 55 C | + 175 C | Reel | 1 Channel | Si | N-Channel | 100 V | 80 A | 8 mOhms | 4.5 V | 61 nC | ||||
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VIEW | IR / Infineon | MOSFET 100V 1 N-CH HEXFET 26mOhms 61nC | 20 V | SMD/SMT | SO-8 | - 55 C | + 150 C | Tube | 1 Channel | Si | N-Channel | 100 V | 6.9 A | 26 mOhms | 61 nC | Enhancement | ||||
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386
In-stock
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Toshiba | MOSFET N-Ch MOS 40A 100V 93W 3110pF 61nC | SMD/SMT | TO-252-3 | Reel | 1 Channel | Si | N-Channel | 100 V | 40 A | 18 mOhms | 61 nC |
