- Vgs - Gate-Source Voltage :
- Mounting Style :
- Package / Case :
- Maximum Operating Temperature :
- Rds On - Drain-Source Resistance :
5 products
IMAGE | PART NO. | PRICE | QUANTITY | STOCK | MANUFACTURE | DESCRIPTION | Vgs - Gate-Source Voltage | Mounting Style | Package / Case | Minimum Operating Temperature | Maximum Operating Temperature | Packaging | Number of Channels | Technology | Transistor Polarity | Vds - Drain-Source Breakdown Voltage | Id - Continuous Drain Current | Rds On - Drain-Source Resistance | Vgs th - Gate-Source Threshold Voltage | Qg - Gate Charge | Channel Mode | |
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163,580
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Infineon Technologies | MOSFET N-Ch 100V 90A TDSON-8 | 20 V | SMD/SMT | TDSON-8 | - 55 C | + 150 C | Reel | 1 Channel | Si | N-Channel | 100 V | 80 A | 10.2 mOhms | 2.2 V | 30 nC | Enhancement | |||
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Infineon Technologies | MOSFET N-Ch 100V 73A TO220-3 | 20 V | Through Hole | TO-220-3 | - 55 C | + 175 C | Tube | 1 Channel | Si | N-Channel | 100 V | 73 A | 11 mOhms | 2.2 V | 30 nC | Enhancement | ||||
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Siliconix / Vishay | MOSFET N Ch 100Vds 20Vgs AEC-Q101 Qualified | +/- 20 V | SMD/SMT | PowerPAK-SO-8L-4 | - 55 C | + 175 C | Reel | 1 Channel | Si | N-Channel | 100 V | 26 A | 22 mOhms | 1.5 V | 30 nC | Enhancement | ||||
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422
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Infineon Technologies | MOSFET N-Ch 100V 44A TO220FP-3 | 20 V | Through Hole | TO-220FP-3 | - 55 C | + 150 C | Tube | 1 Channel | Si | N-Channel | 100 V | 44 A | 11 mOhms | 2.2 V | 30 nC | Enhancement | ||||
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Fairchild Semiconductor | MOSFET 100V/20V N-Channel PTNG MOSFET | +/- 20 V | SMD/SMT | Power33-8 | - 55 C | + 150 C | Reel | 1 Channel | N-Channel | 100 V | 57 A | 6.4 mOhms | 2 V | 30 nC | Enhancement |