- Mounting Style :
- Package / Case :
- Maximum Operating Temperature :
- Rds On - Drain-Source Resistance :
- Vgs th - Gate-Source Threshold Voltage :
8 products
IMAGE | PART NO. | PRICE | QUANTITY | STOCK | MANUFACTURE | DESCRIPTION | Vgs - Gate-Source Voltage | Mounting Style | Package / Case | Minimum Operating Temperature | Maximum Operating Temperature | Packaging | Number of Channels | Technology | Transistor Polarity | Vds - Drain-Source Breakdown Voltage | Id - Continuous Drain Current | Rds On - Drain-Source Resistance | Vgs th - Gate-Source Threshold Voltage | Qg - Gate Charge | Channel Mode | |
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276
In-stock
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Fairchild Semiconductor | MOSFET 100V TO263 7L JEDEC GREEN EMC | 20 V | SMD/SMT | TO-263-7 | - 55 C | + 175 C | Reel | 1 Channel | Si | N-Channel | 100 V | 200 A | 11 mOhms | 2 V | 81 nC | Enhancement | ||||
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36
In-stock
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IR / Infineon | MOSFET MOSFT 100V 80A 15mOhm 81nC | 20 V | SMD/SMT | TO-252-3 | Reel | 1 Channel | Si | N-Channel | 100 V | 80 A | 15 mOhms | 81 nC | ||||||||
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509
In-stock
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Toshiba | MOSFET 100V N-Ch PWR FET 148A 192W 5400pF | 20 V | Through Hole | TO-220-3 | - 55 C | + 150 C | Reel | 1 Channel | Si | N-Channel | 100 V | 148 A | 4 mOhms | 81 nC | ||||||
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70
In-stock
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Toshiba | MOSFET UMOSVIII 100V 4.5m max(VGS=10V) D2PAK | 20 V | SMD/SMT | TO-262-3 | - 55 C | + 150 C | Reel | 1 Channel | Si | N-Channel | 100 V | 136 A | 3.8 mOhms | 4 V | 81 nC | Enhancement | ||||
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500
In-stock
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Infineon Technologies | MOSFET MOSFT 100V 80A 15mOhm 81nC | 20 V | Through Hole | TO-220-3 | Tube | 1 Channel | Si | N-Channel | 100 V | 80 A | 15 mOhms | 81 nC | ||||||||
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150
In-stock
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Toshiba | MOSFET MOSFET NCh 4ohm VGS10V10uAVDS100V | 20 V | Through Hole | TO-220FP-3 | - 55 C | + 150 C | 1 Channel | Si | N-Channel | 100 V | 65 A | 4 mOhms | 2 V to 4 V | 81 nC | Enhancement | |||||
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VIEW | Infineon Technologies | MOSFET 100V AUTO GRADE 1 N-CH HEXFET | 20 V | SMD/SMT | DirectFET-L8 | - 55 C | + 175 C | Reel | 1 Channel | Si | N-Channel | 100 V | 114 A | 3.5 mOhms | 81 nC | Enhancement | |||||
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84
In-stock
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IR / Infineon | MOSFET 100V N-CH HEXFET 15mOhms 81nC | 20 V | SMD/SMT | TO-252-3 | - 55 C | + 175 C | Tube | 1 Channel | Si | N-Channel | 100 V | 80 A | 15 mOhms | 81 nC | Enhancement |