- Manufacture :
- Package / Case :
- Maximum Operating Temperature :
- Rds On - Drain-Source Resistance :
- Qg - Gate Charge :
- Tradename :
4 products
| IMAGE | PART NO. | PRICE | QUANTITY | STOCK | MANUFACTURE | DESCRIPTION | Vgs - Gate-Source Voltage | Mounting Style | Package / Case | Minimum Operating Temperature | Maximum Operating Temperature | Packaging | Number of Channels | Technology | Transistor Polarity | Vds - Drain-Source Breakdown Voltage | Id - Continuous Drain Current | Rds On - Drain-Source Resistance | Vgs th - Gate-Source Threshold Voltage | Qg - Gate Charge | Channel Mode | Tradename | |
|---|---|---|---|---|---|---|---|---|---|---|---|---|---|---|---|---|---|---|---|---|---|---|---|
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3,580
In-stock
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IR / Infineon | MOSFET 100V DIGITAL AUDIO 1 N-CH HEXFET | 20 V | SMD/SMT | DirectFET-SB | - 55 C | + 175 C | Reel | 1 Channel | Si | N-Channel | 100 V | 14.4 A | 51 mOhms | 8.3 nC | Enhancement | Directfet | ||||
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2,080
In-stock
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Infineon Technologies | MOSFET 100V AUTO GRADE 1 N-CH HEXFET | 20 V | SMD/SMT | DirectFET-SB | - 55 C | + 175 C | Reel | 1 Channel | Si | N-Channel | 100 V | 14.4 A | 62 mOhms | 4 V | 8.3 nC | Enhancement | ||||
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2,063
In-stock
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Texas instruments | MOSFET 100V N-Channel NexFET Power MOSFET 8-VSONP -55 t... | 20 V | SMD/SMT | VSONP-8 | - 55 C | + 150 C | Reel | 1 Channel | Si | N-Channel | 100 V | 14.4 A | 58 mOhms | 3.2 V | 4.3 nC | Enhancement | NexFET | |||
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326
In-stock
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Texas instruments | MOSFET 100V, 49mOhm NexFET Power MOSFET | 20 V | SMD/SMT | WSON-FET-6 | - 55 C | + 150 C | Reel | 1 Channel | Si | N-Channel | 100 V | 14.4 A | 58 mOhms | 3.2 V | 4.3 nC | Enhancement | NexFET |
