- Manufacture :
- Mounting Style :
- Package / Case :
- Maximum Operating Temperature :
- Rds On - Drain-Source Resistance :
- Vgs th - Gate-Source Threshold Voltage :
- Qg - Gate Charge :
- Tradename :
10 products
IMAGE | PART NO. | PRICE | QUANTITY | STOCK | MANUFACTURE | DESCRIPTION | Vgs - Gate-Source Voltage | Mounting Style | Package / Case | Minimum Operating Temperature | Maximum Operating Temperature | Packaging | Number of Channels | Technology | Transistor Polarity | Vds - Drain-Source Breakdown Voltage | Id - Continuous Drain Current | Rds On - Drain-Source Resistance | Vgs th - Gate-Source Threshold Voltage | Qg - Gate Charge | Channel Mode | Tradename | |
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1,000
In-stock
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STMicroelectronics | MOSFET POWER MOSFET | 20 V | SMD/SMT | H2PAK-2 | - 55 C | + 175 C | Reel | 1 Channel | Si | N-Channel | 100 V | 110 A | 3.9 mOhms | 4.5 V | 117 nC | Enhancement | ||||
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341
In-stock
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IXYS | MOSFET Linear Extended FBSOA Power MOSFET | SMD/SMT | TO-268-3 | - 55 C | + 150 C | Tube | 1 Channel | Si | N-Channel | 100 V | 110 A | 18 mOhms | 2.5 V | 260 nC | Enhancement | |||||
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305
In-stock
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IXYS | MOSFET L2 Linear Power MOSFET | 20 V | Through Hole | TO-247-3 | - 55 C | + 150 C | Tube | 1 Channel | Si | N-Channel | 100 V | 110 A | 18 mOhms | 2.5 V | 260 nC | Enhancement | ||||
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8,520
In-stock
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STMicroelectronics | MOSFET POWER MOSFET | 20 V | Through Hole | TO-247-3 | - 55 C | + 175 C | Tube | 1 Channel | Si | N-Channel | 100 V | 110 A | 9 mOhms | Enhancement | ||||||
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60
In-stock
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IXYS | MOSFET 110 Amps 100V 0.015 Rds | 20 V | Through Hole | TO-3P-3 | - 55 C | + 175 C | Tube | 1 Channel | Si | N-Channel | 100 V | 110 A | 15 mOhms | 5 V | 110 nC | Enhancement | PolarHT | |||
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909
In-stock
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IXYS | MOSFET 110 Amps 100V 0.015 Rds | 20 V | Through Hole | TO-247-3 | - 55 C | + 175 C | Tube | 1 Channel | Si | N-Channel | 100 V | 110 A | 15 mOhms | 5 V | 110 nC | Enhancement | PolarHT, HiPerFET | |||
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1,000
In-stock
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STMicroelectronics | MOSFET N-Ch 100V 6mOhm 110A STripFET VII | 20 V | SMD/SMT | H2PAK-2 | - 55 C | + 175 C | Reel | 1 Channel | Si | N-Channel | 100 V | 110 A | 6.5 mOhms | 2 V to 4 V | 60 nC | |||||
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VIEW | STMicroelectronics | MOSFET N-CH 100V 49mOhm 110A STripFET VII | 20 V | SMD/SMT | TO-263-7 | - 55 C | + 175 C | Reel | 1 Channel | Si | N-Channel | 100 V | 110 A | 6.5 mOhms | 2.5 V | 72 nC | Enhancement | ||||
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779
In-stock
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STMicroelectronics | MOSFET N-Ch 100V 2.5mOhm 180A STripFET VII | 20 V | Through Hole | TO-220-3 | - 55 C | + 175 C | Tube | 1 Channel | Si | N-Channel | 100 V | 110 A | 3.2 mOhms | 4.5 V | 160 nC | Enhancement | ||||
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485
In-stock
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STMicroelectronics | MOSFET N-Ch 100V 0.0036Ohm typ. 110A | 20 V | Through Hole | TO-220-3 | - 55 C | + 175 C | Tube | 1 Channel | Si | N-Channel | 100 V | 110 A | 4.2 mOhms | 4.5 V | 117 nC |