- Mounting Style :
- Package / Case :
- Maximum Operating Temperature :
- Id - Continuous Drain Current :
- Qg - Gate Charge :
8 products
| IMAGE | PART NO. | PRICE | QUANTITY | STOCK | MANUFACTURE | DESCRIPTION | Vgs - Gate-Source Voltage | Mounting Style | Package / Case | Minimum Operating Temperature | Maximum Operating Temperature | Packaging | Number of Channels | Technology | Transistor Polarity | Vds - Drain-Source Breakdown Voltage | Id - Continuous Drain Current | Rds On - Drain-Source Resistance | Vgs th - Gate-Source Threshold Voltage | Qg - Gate Charge | Channel Mode | Tradename | |
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7,116
In-stock
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Fairchild Semiconductor | MOSFET 100V N-Ch QFET Logic Level | 20 V | Through Hole | TO-251-3 | - 55 C | + 150 C | Tube | 1 Channel | Si | N-Channel | 100 V | 10 A | 180 mOhms | Enhancement | ||||||
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3,714
In-stock
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Fairchild Semiconductor | MOSFET 100V N-Ch QFET Logic Level | 25 V | SMD/SMT | TO-252-3 | - 55 C | + 150 C | Reel | 1 Channel | Si | N-Channel | 100 V | 10 A | 180 mOhms | Enhancement | ||||||
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3,145
In-stock
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Fairchild Semiconductor | MOSFET N-CH/100V/12.8A 0.18OHM | 25 V | Through Hole | TO-220-3 | - 55 C | + 175 C | Tube | 1 Channel | Si | N-Channel | 100 V | 12.8 A | 180 mOhms | Enhancement | QFET | |||||
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2,495
In-stock
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Fairchild Semiconductor | MOSFET 100V N-Ch QFET Logic Level | 20 V | SMD/SMT | TO-252-3 | - 55 C | + 150 C | Reel | 1 Channel | Si | N-Channel | 100 V | 10 A | 180 mOhms | Enhancement | ||||||
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744
In-stock
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Fairchild Semiconductor | MOSFET 100V N-Ch QFET Logic Level | 20 V | Through Hole | TO-220-3 | - 55 C | + 175 C | Tube | 1 Channel | Si | N-Channel | 100 V | 12.8 A | 180 mOhms | Enhancement | QFET | |||||
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2,075
In-stock
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onsemi | MOSFET NCH 100V 9A TP-FA(DPAK) | 20 V | SMD/SMT | TO-252-3 | - 55 C | + 150 C | Reel | 1 Channel | Si | N-Channel | 100 V | 9 A | 180 mOhms | 1.5 V | 9.8 nC | Enhancement | ||||
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1,539
In-stock
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Infineon Technologies | MOSFET 100V 1 N-CH HEXFET 180mOhms 13.3nC | 16 V | SMD/SMT | TO-252-3 | - 55 C | + 175 C | Tube | 1 Channel | Si | N-Channel | 100 V | 10 A | 180 mOhms | 13.3 nC | Enhancement | |||||
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8
In-stock
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Microsemi | MOSFET | 20 V | Through Hole | TO-39-3 | - 55 C | + 150 C | Reel | 1 Channel | Si | N-Channel | 100 V | 8 A | 180 mOhms | 4 V | 28.51 nC | Enhancement |
