- Manufacture :
- Mounting Style :
- Package / Case :
- Qg - Gate Charge :
- Tradename :
5 products
| IMAGE | PART NO. | PRICE | QUANTITY | STOCK | MANUFACTURE | DESCRIPTION | Vgs - Gate-Source Voltage | Mounting Style | Package / Case | Minimum Operating Temperature | Maximum Operating Temperature | Packaging | Number of Channels | Technology | Transistor Polarity | Vds - Drain-Source Breakdown Voltage | Id - Continuous Drain Current | Rds On - Drain-Source Resistance | Vgs th - Gate-Source Threshold Voltage | Qg - Gate Charge | Channel Mode | Tradename | |
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993
In-stock
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Fairchild Semiconductor | MOSFET 100V N-Chan PowerTrench MOSFET | 20 V | SMD/SMT | TO-220-3 | - 55 C | + 175 C | Tube | 1 Channel | Si | N-Channel | 100 V | 144 A | 5.5 mOhms | 156 nC | PowerTrench | |||||
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95
In-stock
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IXYS | MOSFET Polar Power MOSFET HiPerFET | 20 V | Screw Mount | SOT-227-4 | - 55 C | + 175 C | Tube | 1 Channel | Si | N-Channel | 100 V | 295 A | 5.5 mOhms | 5 V | 279 nC | Enhancement | Polar, HiPerFET | |||
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5,999
In-stock
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Toshiba | MOSFET UMOSVIII 100V 6.5m max(VGS=10V) DPAK | 20 V | SMD/SMT | TO-252-3 | - 55 C | + 175 C | Reel | 1 Channel | Si | N-Channel | 100 V | 55 A | 5.5 mOhms | 4 V | 49 nC | Enhancement | ||||
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VIEW | IXYS | MOSFET 200 Amps 100V 5.4 Rds | Through Hole | TO-247-3 | - 55 C | + 175 C | Tube | 1 Channel | Si | N-Channel | 100 V | 200 A | 5.5 mOhms | Enhancement | |||||||
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VIEW | IXYS | MOSFET 200 Amps 100V 5.4 Rds | Through Hole | TO-3P-3 | - 55 C | + 175 C | Tube | 1 Channel | Si | N-Channel | 100 V | 200 A | 5.5 mOhms | Enhancement |
