- Manufacture :
- Mounting Style :
- Package / Case :
- Maximum Operating Temperature :
5 products
| IMAGE | PART NO. | PRICE | QUANTITY | STOCK | MANUFACTURE | DESCRIPTION | Vgs - Gate-Source Voltage | Mounting Style | Package / Case | Minimum Operating Temperature | Maximum Operating Temperature | Packaging | Number of Channels | Technology | Transistor Polarity | Vds - Drain-Source Breakdown Voltage | Id - Continuous Drain Current | Rds On - Drain-Source Resistance | Vgs th - Gate-Source Threshold Voltage | Qg - Gate Charge | Channel Mode | |
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3,000
In-stock
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Fairchild Semiconductor | MOSFET 100V/20V N-Channel PTNG MOSFET | +/- 20 V | SMD/SMT | Power33-8 | - 55 C | + 150 C | Reel | 1 Channel | N-Channel | 100 V | 57 A | 6.4 mOhms | 2 V | 30 nC | Enhancement | ||||
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58
In-stock
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IXYS | MOSFET MOSFET Id180 BVdass100 | Through Hole | TO-220-3 | - 55 C | + 175 C | Tube | 1 Channel | Si | N-Channel | 100 V | 180 A | 6.4 mOhms | Enhancement | ||||||
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VIEW | IXYS | MOSFET 180 Amps 100V 6.1 Rds | SMD/SMT | TO-263-3 | - 55 C | + 175 C | Tube | 1 Channel | Si | N-Channel | 100 V | 180 A | 6.4 mOhms | Enhancement | ||||||
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VIEW | IXYS | MOSFET 180 Amps 100V 6.1 Rds | Through Hole | TO-3P-3 | - 55 C | + 175 C | Tube | 1 Channel | Si | N-Channel | 100 V | 180 A | 6.4 mOhms | Enhancement | ||||||
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VIEW | IXYS | MOSFET 180 Amps 100V 6.1 Rds | Through Hole | TO-247-3 | - 55 C | + 175 C | Tube | 1 Channel | Si | N-Channel | 100 V | 180 A | 6.4 mOhms | Enhancement |
