- Manufacture :
- Package / Case :
- Maximum Operating Temperature :
- Rds On - Drain-Source Resistance :
- Qg - Gate Charge :
10 products
IMAGE | PART NO. | PRICE | QUANTITY | STOCK | MANUFACTURE | DESCRIPTION | Vgs - Gate-Source Voltage | Mounting Style | Package / Case | Minimum Operating Temperature | Maximum Operating Temperature | Packaging | Number of Channels | Technology | Transistor Polarity | Vds - Drain-Source Breakdown Voltage | Id - Continuous Drain Current | Rds On - Drain-Source Resistance | Vgs th - Gate-Source Threshold Voltage | Qg - Gate Charge | Channel Mode | Tradename | |
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2,043
In-stock
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Fairchild Semiconductor | MOSFET MV5 N Z 100V/20V | 20 V | SMD/SMT | MicroFET-6 | - 55 C | + 150 C | Reel | 1 Channel | Si | N-Channel | 100 V | 2.2 A | 446 mOhms | 1 V | 2.1 nC | Enhancement | PowerTrench | ||||
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9,853
In-stock
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Diodes Incorporated | MOSFET 100V N-Ch Enh FET 16Vgs 1.6A 1.3W | 16 V | SMD/SMT | SOT-23-3 | - 55 C | + 150 C | Reel | 1 Channel | Si | N-Channel | 100 V | 1.6 A | 220 mOhms | 1 V | 8.3 nC | Enhancement | |||||
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2,476
In-stock
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onsemi | MOSFET NFET DPAK 100V 23A 56MOHM | 20 V | SMD/SMT | TO-252-3 | - 55 C | + 175 C | Reel | 1 Channel | Si | N-Channel | 100 V | 25 A | 43 mOhms | 1 V | 35 nC | Enhancement | |||||
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1,180
In-stock
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onsemi | MOSFET T5 100V LL S08FL | 16 V | SMD/SMT | SO-FL-8 | - 55 C | + 175 C | Reel | 1 Channel | Si | N-Channel | 100 V | 55 A | 19 mOhms | 1 V | 17 nC | Enhancement | |||||
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914
In-stock
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onsemi | MOSFET T5 100V LL S08FL | 16 V | SMD/SMT | SO-FL-8 | - 55 C | + 175 C | Reel | 1 Channel | Si | N-Channel | 100 V | 55 A | 19 mOhms | 1 V | 17 nC | Enhancement | |||||
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2,765
In-stock
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Diodes Incorporated | MOSFET 100V N-Ch Enh FET 160mOhm 10Vgs 2.6A | 20 V | SMD/SMT | TSOT-26-6 | - 55 C | + 150 C | Reel | 1 Channel | Si | N-Channel | 100 V | 2.6 A | 115 mOhms | 1 V | 9.7 nC | Enhancement | |||||
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1,804
In-stock
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Diodes Incorporated | MOSFET 100V N-Ch Enh FET 220mOhm 16Vgs | 16 V | SMD/SMT | TSOT-26-6 | - 55 C | + 150 C | Reel | 1 Channel | Si | N-Channel | 100 V | 2.24 A | 250 mOhms | 1 V | 8.3 nC | Enhancement | |||||
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VIEW | Diodes Incorporated | MOSFET 100V N-Ch Enh FET 100mOhm 3V | 20 V | SMD/SMT | TO-252-3 | - 55 C | + 150 C | Reel | 1 Channel | Si | N-Channel | 100 V | 18 A | 100 mOhms | 1 V | 25.2 nC | Enhancement | |||||
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3,745
In-stock
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Diodes Incorporated | MOSFET 100V N-Ch Enh FET 20Vgss 2.6A 1.2W | 20 V | SMD/SMT | TSOT-26-6 | - 55 C | + 150 C | Reel | 1 Channel | Si | N-Channel | 100 V | 2.6 A | 115 mOhms | 1 V | 9.7 nC | Enhancement | |||||
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974
In-stock
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Diodes Incorporated | MOSFET N-Ch Enh Mode FET 100Vdss 20Vgss | 20 V | SMD/SMT | PowerDI3333-8 | - 55 C | + 150 C | Reel | 1 Channel | Si | N-Channel | 100 V | 8.5 A | 99 mOhms | 1 V | 14.9 nC | Enhancement |