- Manufacture :
- Mounting Style :
- Package / Case :
- Maximum Operating Temperature :
- Rds On - Drain-Source Resistance :
- Qg - Gate Charge :
21 products
| IMAGE | PART NO. | PRICE | QUANTITY | STOCK | MANUFACTURE | DESCRIPTION | Vgs - Gate-Source Voltage | Mounting Style | Package / Case | Minimum Operating Temperature | Maximum Operating Temperature | Packaging | Number of Channels | Technology | Transistor Polarity | Vds - Drain-Source Breakdown Voltage | Id - Continuous Drain Current | Rds On - Drain-Source Resistance | Vgs th - Gate-Source Threshold Voltage | Qg - Gate Charge | Channel Mode | Tradename | |
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8,323
In-stock
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Infineon Technologies | MOSFET N-Ch 100V 100A TDSON-8 | 20 V | SMD/SMT | TDSON-8 | - 55 C | + 150 C | Reel | 1 Channel | Si | N-Channel | 100 V | 100 A | 3.4 mOhms | 2.2 V | 72 nC | Enhancement | ||||
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GET PRICE |
163,580
In-stock
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Infineon Technologies | MOSFET N-Ch 100V 90A TDSON-8 | 20 V | SMD/SMT | TDSON-8 | - 55 C | + 150 C | Reel | 1 Channel | Si | N-Channel | 100 V | 80 A | 10.2 mOhms | 2.2 V | 30 nC | Enhancement | |||
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18,420
In-stock
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Infineon Technologies | MOSFET N-Ch 100V 300A HSOF-8 | 20 V | SMD/SMT | HSOF-8 | - 55 C | + 175 C | Reel | 1 Channel | Si | N-Channel | 100 V | 300 A | 2 mOhms | 2.2 V | 169 nC | Enhancement | ||||
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22,661
In-stock
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Infineon Technologies | MOSFET Pwr transistor 100V OptiMOS 5 | 20 V | SMD/SMT | TDSON-8 | - 55 C | + 150 C | Reel | 1 Channel | Si | N-Channel | 100 V | 60 A | 8.2 mOhms | 2.2 V | 28 nC | Enhancement | ||||
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13,530
In-stock
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Infineon Technologies | MOSFET 100VPower transistor OptiMOS 5 | 20 V | SMD/SMT | TDSON-8 | - 55 C | + 150 C | Reel | 1 Channel | Si | N-Channel | 100 V | 100 A | 4.7 mOhms | 2.2 V | 70 nC | Enhancement | ||||
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6,262
In-stock
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Infineon Technologies | MOSFET Pwr transistor 100V OptiMOS 5 | 20 V | SMD/SMT | TDSON-8 | - 55 C | + 150 C | Reel | 1 Channel | Si | N-Channel | 100 V | 60 A | 8.2 mOhms | 2.2 V | 28 nC | Enhancement | ||||
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5,380
In-stock
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Infineon Technologies | MOSFET N-Ch 100V 40A TSDSON-8 | 20 V | SMD/SMT | TSDSON-8 | - 55 C | + 150 C | Reel | 1 Channel | Si | N-Channel | 100 V | 40 A | 8.3 mOhms | 2.2 V | 28 nC | Enhancement | ||||
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633
In-stock
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Infineon Technologies | MOSFET N-Ch 100V 120A D2PAK-2 | 20 V | SMD/SMT | TO-263-3 | - 55 C | + 175 C | Reel | 1 Channel | Si | N-Channel | 100 V | 120 A | 1.7 mOhms | 2.2 V | 210 nC | Enhancement | ||||
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1,374
In-stock
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Infineon Technologies | MOSFET N-Ch 100V 120A TO220-3 | 20 V | Through Hole | TO-220-3 | - 55 C | + 175 C | Tube | 1 Channel | Si | N-Channel | 100 V | 120 A | 3.8 mOhms | 2.2 V | 112 nC | Enhancement | ||||
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4,800
In-stock
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Infineon Technologies | MOSFET N-Ch 100V 120A D2PAK-2 | 20 V | SMD/SMT | TO-263-3 | - 55 C | + 175 C | Reel | 1 Channel | Si | N-Channel | 100 V | 120 A | 1.7 mOhms | 2.2 V | 210 nC | Enhancement | ||||
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1,852
In-stock
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Infineon Technologies | MOSFET N-Ch 100V 73A TO220-3 | 20 V | Through Hole | TO-220-3 | - 55 C | + 175 C | Tube | 1 Channel | Si | N-Channel | 100 V | 73 A | 11 mOhms | 2.2 V | 30 nC | Enhancement | ||||
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579
In-stock
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Infineon Technologies | MOSFET N-Ch 100V 120A D2PAK-2 | 20 V | SMD/SMT | TO-263-3 | - 55 C | + 175 C | Reel | 1 Channel | Si | N-Channel | 100 V | 120 A | 3.5 mOhms | 2.2 V | 112 nC | Enhancement | ||||
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431
In-stock
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Infineon Technologies | MOSFET N-Ch 100V 100A TDSON-8 | 20 V | SMD/SMT | TDSON-8 | - 55 C | + 150 C | Reel | 1 Channel | Si | N-Channel | 100 V | 100 A | 3.4 mOhms | 2.2 V | 72 nC | Enhancement | ||||
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422
In-stock
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Infineon Technologies | MOSFET N-Ch 100V 44A TO220FP-3 | 20 V | Through Hole | TO-220FP-3 | - 55 C | + 150 C | Tube | 1 Channel | Si | N-Channel | 100 V | 44 A | 11 mOhms | 2.2 V | 30 nC | Enhancement | ||||
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3,990
In-stock
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Texas instruments | MOSFET 100V N-CH NexFET Pwr MOSFET | 20 V | SMD/SMT | TO-263-3 | - 55 C | + 175 C | Reel | 1 Channel | Si | N-Channel | 100 V | 150 A | 2.8 mOhms | 2.2 V | 98 nC | Enhancement | ||||
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969
In-stock
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Texas instruments | MOSFET CSD19532Q5B Pkg spin | 20 V | TO-263-3 | - 55 C | + 175 C | Reel | 1 Channel | Si | N-Channel | 100 V | 100 A | 6.6 mOhms | 2.2 V | 44 nC | Enhancement | |||||
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170
In-stock
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Texas instruments | MOSFET 100V N-Channel NexFET Power MOSFET | 20 V | SMD/SMT | TO-263-3 | - 55 C | + 175 C | Reel | 1 Channel | Si | N-Channel | 100 V | 200 A | 4.1 mOhms | 2.2 V | 75 nC | Enhancement | NexFET | |||
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GET PRICE |
17,600
In-stock
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Texas instruments | MOSFET 100V, 7.8mOhm SON5x6 N-ch NexFET | 20 V | SMD/SMT | VSONP-8 | - 55 C | + 150 C | Reel | 1 Channel | Si | N-Channel | 100 V | 100 A | 7.8 mOhms | 2.2 V | 35 nC | Enhancement | |||
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1,981
In-stock
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Infineon Technologies | MOSFET N-Ch 100V 180A D2PAK-2 | 20 V | SMD/SMT | TO-263-7 | - 55 C | + 175 C | Reel | 1 Channel | Si | N-Channel | 100 V | 180 A | 2.2 mOhms | 2.2 V | 168 nC | Enhancement | ||||
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5,000
In-stock
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Infineon Technologies | MOSFET N-Ch 100V 40A TSDSON-8 | 20 V | SMD/SMT | TSDSON-8 | - 55 C | + 150 C | Reel | 1 Channel | Si | N-Channel | 100 V | 40 A | 8.3 mOhms | 2.2 V | 28 nC | Enhancement | ||||
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GET PRICE |
50,000
In-stock
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Infineon Technologies | MOSFET N-Ch 100V 120A TO220-3 | 20 V | Through Hole | TO-220-3 | - 55 C | + 175 C | Tube | 1 Channel | Si | N-Channel | 100 V | 120 A | 2 mOhms | 2.2 V | 210 nC | Enhancement |
