- Manufacture :
- Package / Case :
- Maximum Operating Temperature :
- Rds On - Drain-Source Resistance :
4 products
| IMAGE | PART NO. | PRICE | QUANTITY | STOCK | MANUFACTURE | DESCRIPTION | Vgs - Gate-Source Voltage | Mounting Style | Package / Case | Minimum Operating Temperature | Maximum Operating Temperature | Packaging | Number of Channels | Technology | Transistor Polarity | Vds - Drain-Source Breakdown Voltage | Id - Continuous Drain Current | Rds On - Drain-Source Resistance | Vgs th - Gate-Source Threshold Voltage | Qg - Gate Charge | Channel Mode | Tradename | |
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1,078
In-stock
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Infineon Technologies | MOSFET 100V 1 N-CH HEXFET 44mOhms 48nC | 20 V | SMD/SMT | TO-252-3 | - 55 C | + 175 C | Tube | 1 Channel | Si | N-Channel | 100 V | 32 A | 44 mOhms | 48 nC | Enhancement | |||||
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14
In-stock
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Texas instruments | MOSFET 100V, 4.0 mOhm, SON5x6 N-Channel NexFET™ Power MO... | 20 V | SMD/SMT | VSON-Clip-8 | - 55 C | + 150 C | Reel | 1 Channel | Si | N-Channel | 100 V | 100 A | 4.9 mOhms | 2.6 V | 48 nC | Enhancement | NexFET | |||
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9,950
In-stock
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Texas instruments | MOSFET 100V 4.0 mOhm N-Ch NexFET Power MOSFET | 20 V | SMD/SMT | VSON-Clip-8 | - 55 C | + 150 C | Reel | 1 Channel | Si | N-Channel | 100 V | 200 A | 4.9 mOhms | 2.6 V | 48 nC | Enhancement | NexFET | |||
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VIEW | Infineon Technologies | MOSFET 100V 1 N-CH HEXFET 12.4mOhms 48nC | 20 V | SMD/SMT | PQFN-8 | - 55 C | + 150 C | Reel | 1 Channel | Si | N-Channel | 100 V | 63 A | 12.4 mOhms | 48 nC | Enhancement |
