- Vgs - Gate-Source Voltage :
- Package / Case :
- Maximum Operating Temperature :
- Rds On - Drain-Source Resistance :
- Vgs th - Gate-Source Threshold Voltage :
8 products
| IMAGE | PART NO. | PRICE | QUANTITY | STOCK | MANUFACTURE | DESCRIPTION | Vgs - Gate-Source Voltage | Mounting Style | Package / Case | Minimum Operating Temperature | Maximum Operating Temperature | Packaging | Number of Channels | Technology | Transistor Polarity | Vds - Drain-Source Breakdown Voltage | Id - Continuous Drain Current | Rds On - Drain-Source Resistance | Vgs th - Gate-Source Threshold Voltage | Qg - Gate Charge | Channel Mode | Tradename | |
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20,950
In-stock
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Infineon Technologies | MOSFET MOSFT 100V 17A 90mOhm 24.7nC | 20 V | SMD/SMT | TO-252-3 | - 55 C | + 175 C | Reel | 1 Channel | Si | N-Channel | 100 V | 17 A | 90 mOhms | 4 V | 37 nC | |||||
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1,719
In-stock
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Infineon Technologies | MOSFET 100V SINGLE N-CH 39mOhms 37nC | 20 V | SMD/SMT | TO-252-3 | - 55 C | + 175 C | Reel | 1 Channel | Si | N-Channel | 100 V | 31 A | 39 mOhms | 2 V to 4 V | 37 nC | Enhancement | ||||
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2,489
In-stock
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IR / Infineon | MOSFET MOSFT 100V 31A 39mOhm 37nC | 20 V | SMD/SMT | TO-252-3 | - 55 C | + 175 C | Reel | 1 Channel | Si | N-Channel | 100 V | 31 A | 34 mOhms | 4 V | 37 nC | |||||
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1,192
In-stock
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Infineon Technologies | MOSFET 100V 1 N-CH HEXFET 39mOhms 37nC | 20 V | SMD/SMT | TO-252-3 | - 55 C | + 175 C | Tube | 1 Channel | Si | N-Channel | 100 V | 31 A | 39 mOhms | 4 V | 37 nC | Enhancement | ||||
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919
In-stock
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Infineon Technologies | MOSFET 100V 1 N-CH HEXFET 39mOhms 37nC | 20 V | SMD/SMT | SO-8 | - 55 C | + 150 C | Tube | 1 Channel | Si | N-Channel | 100 V | 5.4 A | 39 mOhms | 37 nC | Enhancement | |||||
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14,410
In-stock
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Texas instruments | MOSFET 100V 5.3mOhm Pwr MOSFET | 20 V | SMD/SMT | VSONP-8 | - 55 C | + 150 C | Reel | 1 Channel | Si | N-Channel | 100 V | 100 A | 6 mOhms | 2.7 V | 37 nC | Enhancement | NexFET | |||
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431
In-stock
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Texas instruments | MOSFET 100V,5.3mOhm,NexFET Power MOSFET | 20 V | SMD/SMT | VSONP-8 | - 55 C | + 150 C | Reel | 1 Channel | Si | N-Channel | 100 V | 100 A | 6 mOhms | 2.7 V | 37 nC | Enhancement | NexFET | |||
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24,000
In-stock
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Fairchild Semiconductor | MOSFET PTNG 100/20V Nch Power Trench MOSFET | +/- 20 V | SMD/SMT | Power56-8 | - 55 C | + 150 C | Reel | 1 Channel | N-Channel | 100 V | 78 A | 5.9 mOhms | 2 V | 37 nC | Enhancement |
