- Manufacture :
- Mounting Style :
- Package / Case :
- Maximum Operating Temperature :
- Rds On - Drain-Source Resistance :
5 products
| IMAGE | PART NO. | PRICE | QUANTITY | STOCK | MANUFACTURE | DESCRIPTION | Vgs - Gate-Source Voltage | Mounting Style | Package / Case | Minimum Operating Temperature | Maximum Operating Temperature | Packaging | Number of Channels | Technology | Transistor Polarity | Vds - Drain-Source Breakdown Voltage | Id - Continuous Drain Current | Rds On - Drain-Source Resistance | Vgs th - Gate-Source Threshold Voltage | Qg - Gate Charge | Channel Mode | |
|---|---|---|---|---|---|---|---|---|---|---|---|---|---|---|---|---|---|---|---|---|---|---|
|
|
2,217
In-stock
|
STMicroelectronics | MOSFET N-Ch 100V 0.02 Ohm typ. 35A STripFET | 20 V | SMD/SMT | TO-252-3 | - 55 C | + 175 C | Reel | 1 Channel | Si | N-Channel | 100 V | 32 A | 24 mOhms | 4.5 V | 19 nC | ||||
|
|
2,070
In-stock
|
onsemi | MOSFET NCH 4V DRIVE SERIES | 20 V | SMD/SMT | TO-252-3 | - 55 C | + 150 C | Reel | 1 Channel | Si | N-Channel | 100 V | 17 A | 85 mOhms | 19 nC | |||||
|
|
1,898
In-stock
|
STMicroelectronics | MOSFET POWER MOSFET | 20 V | Through Hole | TO-220-3 | - 55 C | + 175 C | Tube | 1 Channel | Si | N-Channel | 100 V | 32 A | 24 mOhms | 4.5 V | 19 nC | Enhancement | |||
|
|
3,786
In-stock
|
Toshiba | MOSFET N-Ch DTMOS VII-H 42W 1230pF 36A 100V | 20 V | SMD/SMT | TSON-Advance-8 | - 55 C | + 150 C | Reel | 1 Channel | Si | N-Channel | 100 V | 36 A | 13 mOhms | 4 V | 19 nC | Enhancement | |||
|
|
924
In-stock
|
STMicroelectronics | MOSFET N-Ch 100V 0.02 Ohm typ 35A STripFET VII | 20 V | Through Hole | TO-220FP-3 | - 55 C | + 175 C | Tube | 1 Channel | Si | N-Channel | 100 V | 24 A | 24 mOhms | 4.5 V | 19 nC |
