- Mounting Style :
- Package / Case :
- Rds On - Drain-Source Resistance :
- Qg - Gate Charge :
6 products
| IMAGE | PART NO. | PRICE | QUANTITY | STOCK | MANUFACTURE | DESCRIPTION | Vgs - Gate-Source Voltage | Mounting Style | Package / Case | Minimum Operating Temperature | Maximum Operating Temperature | Packaging | Number of Channels | Technology | Transistor Polarity | Vds - Drain-Source Breakdown Voltage | Id - Continuous Drain Current | Rds On - Drain-Source Resistance | Vgs th - Gate-Source Threshold Voltage | Qg - Gate Charge | Channel Mode | Tradename | |
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60
In-stock
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IXYS | MOSFET 110 Amps 100V 0.015 Rds | 20 V | Through Hole | TO-3P-3 | - 55 C | + 175 C | Tube | 1 Channel | Si | N-Channel | 100 V | 110 A | 15 mOhms | 5 V | 110 nC | Enhancement | PolarHT | |||
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54
In-stock
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IXYS | MOSFET 75 Amps 100V 0.025 Rds | 20 V | Through Hole | TO-220-3 | - 55 C | + 175 C | Tube | 1 Channel | Si | N-Channel | 100 V | 75 A | 21 mOhms | 5.5 V | 74 nC | Enhancement | PolarHT | |||
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19
In-stock
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IXYS | MOSFET 140 Amps 100V 0.011 Rds | 20 V | SMD/SMT | TO-268-3 | - 55 C | + 175 C | Tube | 1 Channel | Si | N-Channel | 100 V | 140 A | 11 mOhms | 5 V | 155 nC | Enhancement | PolarHT | |||
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35
In-stock
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IXYS | MOSFET 75 Amps 100V 0.025 Rds | 20 V | Through Hole | TO-3P-3 | - 55 C | + 175 C | Tube | 1 Channel | Si | N-Channel | 100 V | 75 A | 21 mOhms | 5.5 V | 74 nC | Enhancement | PolarHT | |||
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VIEW | IXYS | MOSFET 200 Amps 100V 0.0075 Rds | 20 V | Through Hole | TO-264-3 | - 55 C | + 175 C | Tube | 1 Channel | Si | N-Channel | 100 V | 200 A | 7.5 mOhms | 5 V | 240 nC | Enhancement | PolarHT | |||
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VIEW | IXYS | MOSFET 140 Amps 100V 0.011 Rds | 20 V | Through Hole | TO-3P-3 | - 55 C | + 175 C | Tube | 1 Channel | Si | N-Channel | 100 V | 140 A | 11 mOhms | 5 V | 155 nC | Enhancement | PolarHT |
