- Mounting Style :
- Package / Case :
- Minimum Operating Temperature :
- Rds On - Drain-Source Resistance :
5 products
| IMAGE | PART NO. | PRICE | QUANTITY | STOCK | MANUFACTURE | DESCRIPTION | Vgs - Gate-Source Voltage | Mounting Style | Package / Case | Minimum Operating Temperature | Maximum Operating Temperature | Packaging | Number of Channels | Technology | Transistor Polarity | Vds - Drain-Source Breakdown Voltage | Id - Continuous Drain Current | Rds On - Drain-Source Resistance | Qg - Gate Charge | Channel Mode | |
|---|---|---|---|---|---|---|---|---|---|---|---|---|---|---|---|---|---|---|---|---|---|
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2,588
In-stock
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IR / Infineon | MOSFET 60V 1 N-CH HEXFET 9.4mOhms 26nC | 20 V | SMD/SMT | SO-8 | Tube | 1 Channel | Si | N-Channel | 60 V | 12 A | 9.4 mOhms | 26 nC | ||||||
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2,352
In-stock
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Fairchild Semiconductor | MOSFET 60V Single N-Ch | 15 V | Through Hole | TO-220-3 | - 65 C | + 175 C | Tube | 1 Channel | Si | N-Channel | 60 V | 12 A | 180 mOhms | Enhancement | ||||
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1,381
In-stock
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STMicroelectronics | MOSFET N-Ch 60 Volt 12 Amp | 16 V | Through Hole | TO-251-3 | - 55 C | + 175 C | Tube | 1 Channel | Si | N-Channel | 60 V | 12 A | 100 mOhms | Enhancement | ||||
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2,400
In-stock
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onsemi | MOSFET 60V 12A N-Channel | 15 V | Through Hole | TO-251-3 | - 55 C | + 175 C | Tube | 1 Channel | Si | N-Channel | 60 V | 12 A | 104 mOhms | Enhancement | ||||
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VIEW | IXYS | MOSFET 12 Amps 6V | 20 V | SMD/SMT | TO-252-3 | - 55 C | + 175 C | Tube | 1 Channel | Si | N-Channel | 60 V | 12 A | 85 mOhms |
