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- Vgs th - Gate-Source Threshold Voltage :
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5 products
| IMAGE | PART NO. | PRICE | QUANTITY | STOCK | MANUFACTURE | DESCRIPTION | Vgs - Gate-Source Voltage | Mounting Style | Package / Case | Minimum Operating Temperature | Maximum Operating Temperature | Packaging | Number of Channels | Technology | Transistor Polarity | Vds - Drain-Source Breakdown Voltage | Id - Continuous Drain Current | Rds On - Drain-Source Resistance | Vgs th - Gate-Source Threshold Voltage | Qg - Gate Charge | Channel Mode | |
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In-stock
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Toshiba | MOSFET N-Ch MOS 13A 250V 102W 1100pF 0.25 | Through Hole | TO-220-3 | 1 Channel | Si | N-Channel | 250 V | 13 A | 250 mOhms | |||||||||
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VIEW | Toshiba | MOSFET Power MOSFET N-Channel | 20 V | SMD/SMT | SOP-Advance-8 | - 55 C | + 150 C | Reel | 1 Channel | Si | N-Channel | 250 V | 26 A | 44 mOhms | 2 V | 22 nC | Enhancement | |||
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VIEW | Toshiba | MOSFET UMOSVIII 250V 205m (VGS=10V) SOP-ADV | 20 V | SMD/SMT | SOP-Advance-8 | - 55 C | + 150 C | Reel | 1 Channel | Si | N-Channel | 250 V | 10 A | 168 mOhms | 4 V | 7 nC | Enhancement | |||
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VIEW | Toshiba | MOSFET UMOSVIII 250V 200m (VGS=10V) TSON-ADV | 20 V | SMD/SMT | TSON-Advance-8 | - 55 C | + 150 C | Reel | 1 Channel | Si | N-Channel | 250 V | 9.9 A | 168 mOhms | 4 V | 7 nC | Enhancement | |||
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VIEW | Toshiba | MOSFET X35PBF Power MOSFET Transistr95ohm250V | 20 V | SMD/SMT | SOP-Advance-8 | - 55 C | + 150 C | Reel | 1 Channel | Si | N-Channel | 250 V | 10 A | 95 mOhms | 2 V to 4 V | 11 nC | Enhancement |
